SNOSDJ1A July   2024  – October 2024 LMG2100R026

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay and Mismatch Measurement
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Control Inputs
      2. 7.3.2 Start-Up and UVLO
      3. 7.3.3 Bootstrap Supply Voltage Clamping
      4. 7.3.4 Level Shift
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VCC Bypass Capacitor
        2. 8.2.2.2 Bootstrap Capacitor
        3. 8.2.2.3 Slew Rate Control
        4. 8.2.2.4 Power Dissipation
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Information

7.2 Functional Block Diagram

The following image shows the functional block diagram of the LMG2100R026 device with integrated high-side and low-side GaN FETs.

LMG2100R026