SNOU205 December   2024 LMG2650

 

  1.   1
  2.   Description
  3.   Features
  4.   Applications
  5.   5
  6. 1Evaluation Module Overview
    1. 1.1 Introduction
    2. 1.2 Kit Contents
    3. 1.3 Specification
    4. 1.4 Device Information
    5. 1.5 General TI High Voltage Evaluation User Safety Guidelines
      1. 1.5.1 Safety and Precautions
  7. 2Hardware
    1. 2.1 LMG2650EVM-100 Daughtercard
      1. 2.1.1 Test Points
      2. 2.1.2 Integrated Current Sensing
      3. 2.1.3 Enable Pin
      4. 2.1.4 GDH
      5. 2.1.5 Power Pins
      6. 2.1.6 Heat Sink
    2. 2.2 Motherboard
      1. 2.2.1 Bias Supply
      2. 2.2.2 PWM Input
      3. 2.2.3 Fault Protection
    3. 2.3 Recommended Footprint
    4. 2.4 Test Equipment
    5. 2.5 Test Procedure When Paired With LMG342X-BB-EVM
      1. 2.5.1 Setup
      2. 2.5.2 Start-Up and Operating Procedure
      3. 2.5.3 Test Results
      4. 2.5.4 Shutdown Procedure
      5. 2.5.5 Additional Operating Notes
  8. 3Hardware Design Files
    1. 3.1 LMG2650EVM-100 Schematic
    2. 3.2 Motherboard Schematic
    3. 3.3 PCB Layout
    4. 3.4 Bill of Materials
  9. 4Additional Information
    1. 4.1 Trademarks
  10. 5Related Documentation

1.4 Device Information

The LMG2650EVM-100 features one LMG2650520V GaN FET with integrated drivers and protections in a half-bridge configuration with all the required bias circuit and logic/power level shifting. Essential power stage and gate-driving, high-frequency current loops are fully enclosed on the board to minimize power loop parasitic inductance for reducing voltage overshoots and improving performance. The LMG2650EVM-100 is configured for a socket style external connection for easy interface with external power stages to run the LMG2650 in various applications. Refer to the LMG2650 650V 95mΩ GaN Half Bridge with Integrated Driver and Current Sense Emulation data sheet before using this EVM.