SNVAA73 may   2023 LM53602 , LM53602-Q1 , LM53603-Q1 , LM63625-Q1 , LM63635-Q1 , LMR14020-Q1 , LMR14030-Q1

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2EMI Noise Caused by Instantaneous Switching
  6. 3Optimize Circuit and Layout Design
  7. 4Using a Boot Resistor
  8. 5Design Consideration on RBOOT
    1. 5.1 BT-SW UVLO
    2. 5.2 Refresh Boot Capacitor
    3. 5.3 Thermal
  9. 6Converter With Dedicated RBOOT Pin
  10. 7Summary
  11. 8References

Using a Boot Resistor

The charge-pump circuit in Figure 1-1 uses CBOOT to boost the high-side gate supply above the supply voltage of the power stage. One method to reduce ringing is to include a boot resistor in series with the boot capacitor, which slows down the turn on speed of the high side NFET as shown in Figure 5-2. This method allows more time for the parasitic network to discharge, ultimately limiting the ringing shown in Figure 4-1. The value of the boot resistor is determined by starting at 0 and increasing the resistance until the desired ringing or EMI level is achieved.

GUID-20230504-SS0I-LJR0-QPNZ-CDJ9BRHSKWN2-low.pngFigure 4-1 Reduce SW Ringing by RBOOT