SNVK010 August 2024 TPS7H4011-SP
Table 1-1 lists the device information used in the initial NDD characterization.
NDD Exposure Details | |
---|---|
TI Device | TPS7H4011-SP |
TI Part Name | 5962R2122101VXC |
Package | 30-pin CFP (HLB) |
Technology | Linear BiCMOS (LBC7) |
Lot Number / Date Code | 4002624 / 2408A |
Sample Quantity | 9 +1 control unit |
Exposure Facility | Fast Neutron Irradiation (FNI) Facility of University of Massachusetts Lowell Research Reactor (UMLRR) |
Neutron Fluence (1-MeV equivalent) Level | 1 × 1012, 5 × 1012, 1 × 1013 n/cm2 |
Irradiation Temperature | Ambient room temperature (25ºC) |