SNVK010 August   2024 TPS7H4011-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Facility
    3. 2.3 Test Setup Details
    4. 2.4 Test Configuration and Condition
  6. 3NDD Characterization Test Results
    1. 3.1 NDD Characterization Summary
    2. 3.2 Data Sheet Electrical Parameter Characteristics
  7. 4Applicable and Reference Documents
    1. 4.1 Applicable Documents
    2. 4.2 Reference Documents
  8.   A Appendix: NDD Report Data

Device Details

Table 1-1 lists the device information used in the initial NDD characterization.

Table 1-1 Device and Exposure Details
NDD Exposure Details
TI DeviceTPS7H4011-SP
TI Part Name5962R2122101VXC

Package

30-pin CFP (HLB)
TechnologyLinear BiCMOS (LBC7)
Lot Number / Date Code

4002624 / 2408A

Sample

Quantity
9

+1 control unit

Exposure

Facility
Fast Neutron Irradiation (FNI) Facility of University of Massachusetts Lowell Research Reactor (UMLRR)
Neutron Fluence (1-MeV equivalent) Level1 × 1012, 5 × 1012, 1 × 1013 n/cm2
Irradiation TemperatureAmbient room temperature (25ºC)
 TPS7H4011-SP DeviceFigure 1-1 TPS7H4011-SP Device