SNVS358R July 2005 – June 2016 LP5900
PRODUCTION DATA.
All trademarks are the property of their respective owners.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.