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LM5113 80-V, 1.2-A, 5-A, Half Bridge GaN Driver
SNVS725I
June 2011 – October 2019
LM5113
PRODUCTION DATA.
CONTENTS
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LM5113 80-V, 1.2-A, 5-A, Half Bridge GaN Driver
1
Features
2
Applications
3
Description
Device Images
Simplified Application Diagram
4
Revision History
5
Pin Configuration and Functions
Pin Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Switching Characteristics
6.7
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
Input and Output
7.3.2
Start-Up and UVLO
7.3.3
HS Negative Voltage and Bootstrap Supply Voltage Clamping
7.3.4
Level Shift
7.4
Device Functional Modes
8
Application and Implementation
8.1
Application Information
8.2
Typical Application
8.2.1
Design Requirements
8.2.2
Detailed Design Procedure
8.2.2.1
VDD Bypass Capacitor
8.2.2.2
Bootstrap Capacitor
8.2.2.3
Power Dissipation
8.2.3
Application Curves
9
Power Supply Recommendations
10
Layout
10.1
Layout Guidelines
10.2
Layout Examples
11
Device and Documentation Support
11.1
Documentation Support
11.1.1
Related Documentation
11.2
Support Resources
11.3
Trademarks
11.4
Electrostatic Discharge Caution
11.5
Glossary
12
Mechanical, Packaging, and Orderable Information
IMPORTANT NOTICE
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DATA SHEET
LM5113 80-V, 1.2-A, 5-A, Half Bridge GaN Driver
1
Features
Independent high-side and low-side
TTL logic inputs
1.2 A / 5 A peak source/sink current
High-side floating bias voltage rail
Operates up to 100 VDC
Internal bootstrap supply voltage clamping
Split outputs for adjustable
turnon/turnoff strength
0.6-Ω / 2.1-Ω pulldown/pullup resistance
Fast propagation times (28 ns typical)
Excellent propagation delay matching
(1.5 ns typical)
Supply rail undervoltage lockout
Low power consumption