SNVSA50C August   2015  – May 2017 LP8861-Q1

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Internal LDO Electrical Characteristics
    7. 7.7  Protection Electrical Characteristics
    8. 7.8  Power Line FET Control Electrical Characteristics
    9. 7.9  Current Sinks Electrical Characteristics
    10. 7.10 PWM Brightness Control Electrical Characteristics
    11. 7.11 Boost/SEPIC Converter Characteristics
    12. 7.12 Logic Interface Characteristics
    13. 7.13 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Integrated Boost/SEPIC Converter
      2. 8.3.2 Internal LDO
      3. 8.3.3 LED Current Sinks
        1. 8.3.3.1 Current Sink Configuration
        2. 8.3.3.2 Current Setting
        3. 8.3.3.3 Brightness Control
      4. 8.3.4 Power-Line FET Control
      5. 8.3.5 LED Current Dimming With External Temperature Sensor
      6. 8.3.6 Protection and Fault Detection
        1. 8.3.6.1 Adaptive Boost Control and Functionality of LED Fault Comparators
        2. 8.3.6.2 Overview of the Fault/Protection Schemes
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device States
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Typical Application for 4 LED Strings
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Inductor Selection
          2. 9.2.1.2.2 Output Capacitor Selection
          3. 9.2.1.2.3 Input Capacitor Selection
          4. 9.2.1.2.4 LDO Output Capacitor
          5. 9.2.1.2.5 Diode
          6. 9.2.1.2.6 Power Line Transistor
          7. 9.2.1.2.7 Input Current Sense Resistor
        3. 9.2.1.3 Application Curves
      2. 9.2.2 High Output Current Application
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 SEPIC Mode Application
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
          1. 9.2.3.2.1 Diode
          2. 9.2.3.2.2 Inductor
        3. 9.2.3.3 Application Curves
      4. 9.2.4 Application with Temperature Based LED Current De-rating
        1. 9.2.4.1 Design Requirements
        2. 9.2.4.2 Detailed Design Procedure
        3. 9.2.4.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
      1. 13.1.2 Tape and Reel Information
  13. 13Mechanical, Packaging, and Orderable Information

Layout

Layout Guidelines

Figure 35 is a layout recommendation for the LP8861-Q1 used to demonstrate the principles of good layout. This layout can be adapted to the actual application layout if or where possible. It is important that all boost components are close to the chip, and the high current traces must be wide enough. By placing boost components on one side of the chip it is easy to keep the ground plane intact below the high current paths. This way other chip pins can be routed more easily without splitting the ground plane. Bypass LDO capacitor must as close as possible to the device.

Here are some main points to help the PCB layout work:

  • Current loops need to be minimized:
    • For low frequency the minimal current loop can be achieved by placing the boost components as close as possible to the SW and PGND pins. Input and output capacitor grounds need to be close to each other to minimize current loop size
    • Minimal current loops for high frequencies can be achieved by making sure that the ground plane is intact under the current traces. High-frequency return currents try to find route with minimum impedance, which is the route with minimum loop area, not necessarily the shortest path. Minimum loop area is formed when return current flows just under the positive current route in the ground plane, if the ground plane is intact under the route
  • GND plane needs to be intact under the high current boost traces to provide shortest possible return path and smallest possible current loops for high frequencies.
  • Current loops when the boost switch is conducting and not conducting need to be on the same direction in optimal case.
  • Inductors must be placed so that the current flows in the same direction as in the current loops. Rotating inductor 180° changes current direction.
  • Use separate power and noise-free grounds. Power ground is used for boost converter return current and noise-free ground for more sensitive signals, like LDO bypass capacitor grounding as well as grounding the GND pin of the device itself.
  • Boost output feedback voltage to LEDs need to be taken out after the output capacitors, not straight from the diode cathode.
  • Place LDO 1-µF bypass capacitor as close as possible to the LDO pin.
  • Input and output capacitors need strong grounding (wide traces, many vias to GND plane).
  • If two output capacitors are used they need symmetrical layout to get both capacitors working ideally.
  • Output ceramic capacitors have DC-bias effect. If the output capacitance is too low, it can cause boost to become unstable on some loads; this increases EMI. DC bias characteristics need to be obtained from the component manufacturer; DC bias is not taken into account on component tolerance. X5R/X7R capacitors are recommended.

Layout Example

LP8861-Q1 layout_SNVSA50.gif Figure 35. LP8861-Q1 Layout