SNVSAB6B March 2017 – July 2018 LP8863-Q1
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VIN | Input voltage | 3 | 48 | V | ||
VOUT | Output voltage | Boost mode (RFBTOP = 910 kΩ, RFBBOT = 100 kΩ) | 20 | 47 | V | |
SEPIC mode (RFBTOP = 560 kΩ, RFBBOT = 170 kΩ) | 6 | 24 | ||||
ƒSW | Switching frequency | BST_FSET = 3.93 kΩ | 303 | kHz | ||
BST_FSET = 4.75 kΩ | 400 | |||||
BST_FSET = 5.76 kΩ | 606 | |||||
BST_FSET = 7.87 kΩ | 800 | |||||
BST_FSET = 11 kΩ | 1000 | |||||
BST_FSET = 17.8 kΩ | 1250 | |||||
BST_FSET = 42.2 kΩ | 1667 | |||||
BST_FSET = 140 kΩ | 2200 | |||||
VOUT/VIN | Max conversion ratio | Boost mode, IOUT = 6 x 150 mA | 5.5(1) | |||
Boost mode, IOUT = 6 x 85 mA | 10(1) | |||||
SEPIC mode | 0.2 | 5(1) | ||||
IMAX | Boost switching current limit | RSENSE = 20 mΩ | 9 | 10 | 11 | A |
VGD | External FET gate drive voltage | VDD = 5 V +/-10%, CP Disabled | 4.5 | 5 | 5.5 | V |
VDD = 3.3 V +/-10%, CP Enabled | 6 | 6.6 | 7.2 | |||
VDD = 5 V +/-10%, CP Enabled | 9 | 10 | 11 | |||
GDRDSONH | RDSON of internal high side FET to drive gate of external FET | Source, VGD/(GDRDSON + Total resistance to gate input of SW FET) must not be higher than 2.5A | 1.4 | Ω | ||
GDRDSONL | RDSON of internal low side FET to drive gate of external FET | Sink, VGD/(GDRDSON + Total resistance to gate input of SW FET) must not be higher than 2.5A | 0.75 | Ω | ||
tSTART-UP | Start-up time | Delay from beginning of boost soft start to when LED drivers can begin | 50 | ms | ||
TON | Minimum switch on time | 120 | ns | |||
TOFF | Minimum switch off time | 70 | ns | |||
VBST_OVPL | BOOST_OVP low threshold at FB pin | 1.423 | V | |||
VBST_OVPH | BOOST_OVP high threshold at FB pin | 1.76 | V |