SNVSAE3B March 2016 – November 2017 LM5161
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Input voltage | VIN to AGND | –0.3 | 100 | V |
EN/UVLO to AGND | –0.3 | 100 | ||
RON to AGND | –0.3 | 100 | ||
BST to AGND | –0.3 | 114 | ||
VCC to AGND | –0.3 | 14 | ||
FPWM to AGND | –0.3 | 14 | ||
SS to AGND | –0.3 | 7 | ||
FB to AGND | –0.3 | 7 | ||
Output voltage | BST to SW | –0.3 | 14 | V |
BST to VCC | 100 | |||
SW to AGND | –1.5 | 100 | ||
SW to AGND (20-ns transient) | –3 | |||
Maximum junction temperature(3) | –40 | 150 | °C | |
Storage temperature Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±750 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VIN input voltage | 4.5 | 100 | V | ||
IO output current | 1 | A | |||
External VCC bias voltage | 9 | 13 | V | ||
Operating junction temperature(2) | –40 | 125 | °C |
THERMAL METRIC | LM5161 | UNIT | |
---|---|---|---|
PWP (HTSSOP) | |||
14 PINS | |||
RθJA | Junction-to-ambient thermal resistance(1) | 39.3 | °C/W |
RθJCbot | Junction-to-case (bottom) thermal resistance(1) | 2.0 | °C/W |
ψJB | Junction-to-board thermal characteristic parameter | 19.3 | °C/W |
RθJB | Junction-to-board thermal resistance | 19.6 | °C/W |
RθJCtop | Junction-to-case (top) thermal resistance | 22.8 | °C/W |
ψJT | Junction-to-top thermal characteristic parameter | 0.5 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY CURRENT | ||||||
ISD | Input shutdown current | VIN = 48 V, EN/UVLO = 0 V | 50 | 90 | µA | |
IOP | Input operating current | VIN = 48 V, FB = 3 V, Non-switching | 2.3 | 2.8 | mA | |
VCC SUPPLY | ||||||
VCC | Bias regulator output | VIN = 48 V, ICC = 20 mA | 6.3 | 7.3 | 8.5 | V |
VCC | Bias regulator current limit | VIN = 48 V | 30 | mA | ||
VCC(UV) | VCC undervoltage threshold | VCC rising | 3.98 | 4.1 | V | |
VCC(HYS) | VCC undervoltage hysteresis | VCC falling | 185 | mV | ||
VCC(LDO) | VIN - VCC dropout voltage | VIN = 4.5 V, ICC = 20 mA | 200 | 340 | mV | |
HIGH-SIDE FET | ||||||
RDS(ON) | High-side on resistance | V(BST - SW) = 7 V, ISW = 0.5A | 0.58 | Ω | ||
BST(UV) | Bootstrap gate drive UV | V(BST - SW) rising | 2.93 | 3.6 | V | |
BST(HYS) | Gate drive UV hysteresis | V(BST - SW) falling | 200 | mV | ||
LOW-SIDE FET | ||||||
RDS(ON) | Low-side on resistance | ISW = 0.5 A | 0.24 | Ω | ||
HIGH-SIDE CURRENT LIMIT | ||||||
ILIM (HS) | High-side current limit threshold | 1.3 | 1.61 | 1.9 | A | |
TRES | Current limit response time | ILIM (HS)threshold detect to FET turn-off | 100 | ns | ||
TOFF | Current limit forced off-time | FB = 0 V, VIN = 72 V | 13 | 16.5 | 21 | µs |
TOFF1 | Current limit forced off-time | FB = 0.1 V, VIN = 72 V | 10 | 13 | 17 | µs |
TOFF2 | Current limit forced off-time | FB = 1 V, VIN = 72 V | 2 | 2.7 | 4.1 | µs |
LOW-SIDE CURRENT LIMIT | ||||||
ISOURCE(LS) | Sourcing current limit | 1.3 | 1.6 | 1.9 | A | |
ISINK(LS) | Sinking current limit | 3 | ||||
DIODE EMULATION | ||||||
VFPWM(LOW) | FPWM input logic low | VIN = 48 V | 1 | V | ||
VFPWM(HIGH) | FPWM input logic high | VIN = 48 V | 3 | |||
IZX | Zero cross detect current | FPWM = 0 (Diode emulation) | 22.5 | mA | ||
REGULATION COMPARATOR | ||||||
VREF | FB regulation level | VIN = 48 V | 1.975 | 2 | 2.015 | V |
I(BIAS) | FB input bias current | VIN = 48 V | 100 | nA | ||
ERROR CORRECTION AMPLIFIER AND SOFT START | ||||||
GM | Error amp transconductance | FB = VREF (±) 10 mV | 100 | µA/V | ||
IEA(SOURCE) | Error amp source current | FB = 1 V, SS = 1 V | 7.5 | 10 | 12.5 | µA |
IEA(SINK) | Error amp sink current | FB = 5 V, SS = 2.25 V | 7.5 | 10 | 12.5 | |
V(SS-FB) | VSS - VFB clamp voltage | FB = 1.75 V, CSS= 1 nF | 135 | mV | ||
ISS | Soft-start charging current | SS = 0.5 V | 7.5 | 10 | 12.5 | µA |
ENABLE/UVLO | ||||||
VUVLO (TH) | UVLO threshold | EN/UVLO rising | 1.195 | 1.24 | 1.272 | V |
IUVLO(HYS) | UVLO hysteresis current | EN/UVLO = 1.4 V | 15 | 20 | 25 | µA |
VSD(TH) | Shutdown mode threshold | EN/UVLO falling | 0.29 | 0.35 | V | |
VSD(HYS) | Shutdown threshold hysteresis | EN/UVLO rising | 50 | mV | ||
THERMAL SHUTDOWN | ||||||
TSD | Thermal shutdown threshold | 175 | °C | |||
TSD(HYS) | Thermal shutdown hysteresis | 20 | °C |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
MINIMUM OFF-TIME | ||||||
TOFF-MIN | Minimum off-time, FB = 0 V | 170 | ns | |||
TOFF-MIN | Minimum off-time, FB = 0 V, VIN = 4.5 V | 200 | ns | |||
ON-TIME GENERATOR | ||||||
TON Test 1 | VIN = 24 V, RON = 100 kΩ | 420 | 540 | 665 | ns | |
TON Test 2 | VIN = 48 V, RON = 100 kΩ | 270 | ns | |||
TON Test 3 | VIN = 8 V, RON = 100 kΩ | 1150 | 1325 | 1500 | ns | |
TON Test 4 | VIN = 72V, RON = 150 kΩ | 285 | ns |
VOUT = 3.3 V | RON = 110 kΩ | |
FPWM = 0 |
VOUT = 12 V | RON = 402 kΩ | |
FPWM = 0 | L = 100 µH |
VOUT = 12 V | RON = 300 kΩ | |
FPWM = 1 | L = 100 µH |
VIN = 48 V | ||
VIN = 48 V | ||
VIN = 48 V | ||
VIN = 48 V | ||
VIN = 48 V | ||
VOUT = 5 V | RON = 169 kΩ | |
L=47 µH |
VOUT = 12 V | RON = 402 kΩ | |
FPWM = 1 | L = 100 µH |
IOUT = 1 A | FPWM = 0 | |
VOUT = 12 V | ||
VFB = 3 V | ||
VIN = 48 V | ||
VIN = 48 V | ||
VIN = 48 V | ||
VIN = 48 V | ||
ISW = 500 mA | VIN = 48 V | |