SNVSAE9D January   2016  – May 2017 TPS61194-Q1

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Internal LDO Electrical Characteristics
    7. 7.7  Protection Electrical Characteristics
    8. 7.8  Current Sinks Electrical Characteristics
    9. 7.9  PWM Brightness Control Electrical Characteristics
    10. 7.10 Boost and SEPIC Converter Characteristics
    11. 7.11 Logic Interface Characteristics
    12. 7.12 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Integrated DC-DC Converter
      2. 8.3.2 Internal LDO
      3. 8.3.3 LED Current Sinks
        1. 8.3.3.1 Output Configuration
        2. 8.3.3.2 Current Setting
        3. 8.3.3.3 Brightness Control
      4. 8.3.4 Protection and Fault Detections
        1. 8.3.4.1 Adaptive DC-DC Voltage Control and Functionality of LED Fault Comparators
        2. 8.3.4.2 Overview of the Fault/Protection Schemes
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device States
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Typical Application for 4 LED Strings
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Inductor Selection
          2. 9.2.1.2.2 Output Capacitor Selection
          3. 9.2.1.2.3 Input Capacitor Selection
          4. 9.2.1.2.4 LDO Output Capacitor
          5. 9.2.1.2.5 Diode
        3. 9.2.1.3 Application Curves
      2. 9.2.2 SEPIC Mode Application
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Inductor
          2. 9.2.2.2.2 Diode
          3. 9.2.2.2.3 Capacitor C1
        3. 9.2.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Device and Documentation Support

Device Support

Development Support

Power Stage Designer™ Tool can be used for both boost and SEPIC: http://www.ti.com/tool/powerstage-designer

Documentation Support

Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

Trademarks

E2E is a trademark of Texas Instruments.

Power Stage Designer is a trademark of TI.

All other trademarks are the property of their respective owners.

Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

Glossary

SLYZ022TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.