SNVSAI1D June   2017  – August 2021 LM5176

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Fixed Frequency Valley/Peak Current Mode Control with Slope Compensation
      2. 7.3.2  VCC Regulator and Optional BIAS Input
      3. 7.3.3  Enable/UVLO
      4. 7.3.4  Soft Start
      5. 7.3.5  Overcurrent Protection
      6. 7.3.6  Average Input/Output Current Limiting
      7. 7.3.7  Operation Above 40-V Input
      8. 7.3.8  CCM Operation
      9. 7.3.9  Frequency and Synchronization (RT/SYNC)
      10. 7.3.10 Frequency Dithering
      11. 7.3.11 Output Overvoltage Protection (OVP)
      12. 7.3.12 Power Good (PGOOD)
      13. 7.3.13 Gm Error Amplifier
      14. 7.3.14 Integrated Gate Drivers
      15. 7.3.15 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown, Standby, and Operating Modes
      2. 7.4.2 MODE Pin Configuration
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Custom Design with WEBENCH Tools
        2. 8.2.2.2  Frequency
        3. 8.2.2.3  VOUT
        4. 8.2.2.4  Inductor Selection
        5. 8.2.2.5  Output Capacitor
        6. 8.2.2.6  Input Capacitor
        7. 8.2.2.7  Sense Resistor (RSENSE)
        8. 8.2.2.8  Slope Compensation
        9. 8.2.2.9  UVLO
        10. 8.2.2.10 Soft-Start Capacitor
        11. 8.2.2.11 Dither Capacitor
        12. 8.2.2.12 MOSFETs QH1 and QL1
        13. 8.2.2.13 MOSFETs QH2 and QL2
        14. 8.2.2.14 Frequency Compensation
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
      2. 11.1.2 Development Support
        1. 11.1.2.1 Custom Design with WEBENCH Tools
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

8.2.2.12 MOSFETs QH1 and QL1

The input side MOSFETs QH1 and QL1 need to withstand the maximum input voltage of 50 V. In addition, they must withstand the transient spikes at SW1 during switching. Therefore, QH1 and QL1 should be rated for 60 V or higher. The gate plateau voltages of the MOSFETs should be smaller than the minimum input voltage of the converter, otherwise the MOSFETs may not fully enhance during start-up or overload conditions.

The power loss in QH1 in the boost mode of operation is approximated by:

Equation 30. GUID-EC7E609B-7CB8-474A-AAF4-9596E7E63632-low.gif

The power loss in QH1 in buck mode of operation consists of both conduction and switching loss components given by Equation 31 and Equation 32, respectively:

Equation 31. GUID-93FE2D4D-6E0E-4D34-8A5F-342890A1535C-low.gif
Equation 32. GUID-0C14A0F9-DCE4-4EC3-952C-6DACDBE20820-low.gif

The rise (tr) and the fall (tf) times are based on the MOSFET data sheet information or measured in the lab. Typically, a MOSFET with smaller RDSON (smaller conduction loss) will have longer rise and fall times (larger switching loss).

The power loss in QL1 in the buck mode of operation is shown in Equation 33:

Equation 33. GUID-963F0184-991C-4DD7-BD7D-8D02E0F8E6E7-low.gif