SNVSAY4F august   2018  – august 2023 LM5155-Q1 , LM51551-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Description (continued)
  7. 6 Device Comparison Table
  8. 7 Pin Configuration and Functions
  9. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Line Undervoltage Lockout (UVLO/SYNC Pin)
      2. 9.3.2  High Voltage VCC Regulator (BIAS, VCC Pin)
      3. 9.3.3  Soft Start (SS Pin)
      4. 9.3.4  Switching Frequency (RT Pin)
      5. 9.3.5  Clock Synchronization (UVLO/SYNC Pin)
      6. 9.3.6  Current Sense and Slope Compensation (CS Pin)
      7. 9.3.7  Current Limit and Minimum On-time (CS Pin)
      8. 9.3.8  Feedback and Error Amplifier (FB, COMP Pin)
      9. 9.3.9  Power-Good Indicator (PGOOD Pin)
      10. 9.3.10 Hiccup Mode Overload Protection (LM51551 Only)
      11. 9.3.11 Maximum Duty Cycle Limit and Minimum Input Supply Voltage
      12. 9.3.12 MOSFET Driver (GATE Pin)
      13. 9.3.13 Overvoltage Protection (OVP)
      14. 9.3.14 Thermal Shutdown (TSD)
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode
      2. 9.4.2 Standby Mode
      3. 9.4.3 Run Mode
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Custom Design With WEBENCH® Tools
        2. 10.2.2.2 Recommended Components
        3. 10.2.2.3 Inductor Selection (LM)
        4. 10.2.2.4 Output Capacitor (COUT)
        5. 10.2.2.5 Input Capacitor
        6. 10.2.2.6 MOSFET Selection
        7. 10.2.2.7 Diode Selection
        8. 10.2.2.8 Efficiency Estimation
      3. 10.2.3 Application Curve
    3. 10.3 System Examples
  12. 11Power Supply Recommendations
  13. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Examples
  14. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
      2. 13.1.2 Development Support
        1. 13.1.2.1 Custom Design With WEBENCH® Tools
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  15. 14Mechanical, Packaging, and Orderable Information

10.2.2.2 Recommended Components

Table 10-2 shows a recommended list of materials for this typical application.

Table 10-2 List of Materials
REFERENCE DESIGNATORQTY.SPECIFICATIONMANUFACTURERPART NUMBER(1)
RT1RES, 49.9 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603Vishay-DaleCRCW060349K9FKEA
RFBT1RES, 47.0 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603Vishay-DaleCRCW060347K0FKEA
RFBB1RES, 2.0 k, 5%, 0.1 W, AEC-Q200 Grade 0, 0603Vishay-DaleCRCW06032K00JNEA
LM1Inductor, Shielded, Composite, 6.8 µH, 18.5 A, 0.01 Ω, SMDCoilcraftXAL1010-682MEB
RS1RES, 0.008, 1%, 3 W, AEC-Q200 Grade 0, 2512 WIDESusumuKRL6432E-M-R008-F-T1
RSL1RES, 0, 5%, 0.1 W, 0603Yageo AmericaRC0603JR-070RL
COUT13CAP, CERM, 4.7 µF, 50 V, ±10%, X7R, 1210TDKC3225X7R1H475K250AB
COUT2 (Bulk)2CAP, Aluminum Polymer, 100 µF, 50 V, ±20%, 0.025 Ω, AEC-Q200 Grade 2, D10xL10mm SMDChemi-ConHHXB500ARA101MJA0G
CIN16CAP, CERM, 10 µF, 50 V, ±10%, X7R, 1210MuRataGRM32ER71H106KA12L
CIN2 (Bulk)1CAP, Polymer Hybrid, 100 µF, 50 V, ±20%, 28 Ω, 10x10 SMDPanasonicEEHZC1H101P
Q11MOSFET, N-CH, 40 V, 50 A, AEC-Q101, SON-8InfineonIPC50N04S5L5R5ATMA1
D11Schottky, 60 V, 10 A, AEC-Q101, CFP15NexperiaPMEG060V100EPDZ
RCOMP1RES, 11.3 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603Vishay-DaleCRCW060311K3FKEA
CCOMP1CAP, CERM, 0.022 µF, 100 V, ±10%, X7R, AEC-Q200 Grade 1, 0603TDKCGA3E2X7R2A223K080AA
CHF1CAP, CERM, 220 pF, 20 V, ±5%, C0G/NP0, AEC-Q200 Grade 1, 0603TDKCGA3E2C0G1H221J080AA
RUVLOT1RES, 21.0 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603Vishay-DaleCRCW060321K0FKEA
RUVLOB1RES, 7.32 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603Vishay-DaleCRCW06037K32FKEA
RUVLOS0N/AN/AN/A
CSS1CAP, CERM, 0.22 µF, 50 V, ±10%, X7R, AEC-Q200 Grade 1, 0603TDKCGA3E3X7R1H224K080AB
DG0N/AN/AN/A
RG1RES, 0, 5%, 0.1 W, 0603Yageo AmericaRC0603JR-070RL
CF1CAP, CERM, 100 pF, 50 V, ±1%, C0G/NP0, 0603KemetC0603C101F5GACTU
RF1RES, 100, 1%, 0.1 W, 0603Yageo AmericaRC0603FR-07100RL
RSNB0N/AN/AN/A
CSNB0N/AN/AN/A
RBIAS1RES, 0, 5%, 0.1 W, AEC-Q200 Grade 0, 0603PanasonicERJ-3GEY0R00V
CBIAS1CAP, CERM, 0.01 µF, 50 V, ±10%, X7R, 0603Samsung Electro-MechanicsCL10B103KB8NCNC
CVCC1CAP, CERM, 1 µF, 16 V, ±20%, X7R, AEC-Q200 Grade 1, 0603MuRataGCM188R71C105MA64D
RPG1RES, 24.9 k, 1%, 0.1 W, 0603Yageo AmericaRC0603FR-0724K9L