SNVSB51 Data sheet

SNVSB51B September 2018 – April 2024 LM5164-Q1

PRODUCTION DATA

5.5 Electrical Characteristics

Typical values correspond to T_J = 25°C. Minimum and maximum limits apply over the full –40°C to 150°C junction temperature range unless otherwise indicated. V_IN = 24 V and V_EN/UVLO = 2 V unless otherwise stated.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENT
I_Q-SHUTDOWN	VIN shutdown current	V_EN= 0 V		3	15	µA
I_Q-SLEEP1	VIN sleep current	V_EN= 2.5 V, V_FB= 1.5 V		10.5	25	µA
I_Q-ACTIVE	VIN active current	V_EN= 2.5 V		600	880	µA
EN/UVLO
V_SD-RISING	Shutdown threshold	V_EN/UVLO rising			1.1	V
V_SD-FALLING	Shutdown threshold	V_EN/UVLO falling	0.45			V
V_EN-RISING	Enable threshold	V_EN/UVLO rising	1.45	1.5	1.55	V
V_EN-FALLING	Enable threshold	V_EN/UVLO falling	1.35	1.4	1.44	V
FEEDBACK
V_REF	FB regulation voltage	V_FB falling	1.181	1.2	1.218	V
TIMING
t_ON1	On-time1	V_VIN= 6 V, R_RON= 75 kΩ		5000		ns
t_ON2	On-time2	V_VIN= 6 V, R_RON= 25 kΩ		1650		ns
t_ON3	On-time3	V_VIN= 12 V, R_RON= 75 kΩ		2550		ns
t_ON4	On-time4	V_VIN= 12 V, R_RON= 25 kΩ		830		ns
PGOOD
V_PG-UTH	FB upper threshold for PGOOD high to low	V_FB rising	1.105	1.14	1.175	V
V_PG-LTH	FB lower threshold for PGOOD high to low	V_FB falling	1.055	1.08	1.1	V
V_PG-HYS	PGOOD upper and lower threshold hysteresis	V_FB falling		60		mV
R_PG	PGOOD pulldown resistance	V_FB = 1 V		30		Ω
BOOTSTRAP
V_BST-UV	Gate drive UVLO	V_BST rising		2.7	3.4	V
POWER SWITCHES
R_DSON-HS	High-side MOSFET R_DSON	I_SW= –100 mA		0.725		Ω
R_DSON-LS	Low-side MOSFET R_DSON	I_SW= 100 mA		0.33		Ω
SOFT START
t_SS	Internal soft-start time		1.75	3	4.75	ms
CURRENT LIMIT
I_PEAK1	Peak current limit threshold (HS)		1.25	1.5	1.75	A
I_PEAK2	Peak current limit threshold (LS)		1.25	1.5	1.75	A
I_DELTA-ILIM	Min of (I_PEAK1 or I_PEAK2) minus I_VALLEY		200	300		mA
I_VALLEY	Valley current limit threshold		0.95	1.2	1.4	A
THERMAL SHUTDOWN
T_SD	Thermal shutdown threshold	T_J rising		175		°C
T_SD-HYS	Thermal shutdown hysteresis			10		°C