SNVSB70F May   2019  – June 2021 LM61460-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Characteristics
    7. 8.7 Systems Characteristics
    8. 8.8 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  EN/SYNC Uses for Enable and VIN UVLO
      2. 9.3.2  EN/SYNC Pin Uses for Synchronization
      3. 9.3.3  Clock Locking
      4. 9.3.4  Adjustable Switching Frequency
      5. 9.3.5  PGOOD Output Operation
      6. 9.3.6  Internal LDO, VCC UVLO, and BIAS Input
      7. 9.3.7  Bootstrap Voltage and VCBOOT-UVLO (CBOOT Pin)
      8. 9.3.8  Adjustable SW Node Slew Rate
      9. 9.3.9  Spread Spectrum
      10. 9.3.10 Soft Start and Recovery From Dropout
      11. 9.3.11 Output Voltage Setting
      12. 9.3.12 Overcurrent and Short Circuit Protection
      13. 9.3.13 Thermal Shutdown
      14. 9.3.14 Input Supply Current
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode
      2. 9.4.2 Standby Mode
      3. 9.4.3 Active Mode
        1. 9.4.3.1 CCM Mode
        2. 9.4.3.2 Auto Mode - Light Load Operation
          1. 9.4.3.2.1 Diode Emulation
          2. 9.4.3.2.2 Frequency Reduction
        3. 9.4.3.3 FPWM Mode - Light Load Operation
        4. 9.4.3.4 Minimum On-time (High Input Voltage) Operation
        5. 9.4.3.5 Dropout
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1  Choosing the Switching Frequency
        2. 10.2.2.2  Setting the Output Voltage
        3. 10.2.2.3  Inductor Selection
        4. 10.2.2.4  Output Capacitor Selection
        5. 10.2.2.5  Input Capacitor Selection
        6. 10.2.2.6  BOOT Capacitor
        7. 10.2.2.7  BOOT Resistor
        8. 10.2.2.8  VCC
        9. 10.2.2.9  BIAS
        10. 10.2.2.10 CFF and RFF Selection
        11. 10.2.2.11 External UVLO
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Ground and Thermal Considerations
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

8.5 Electrical Characteristics

Limits apply over the recommended operating junction temperature range of -40°C to +150°C, unless otherwise stated. Minimum and Maximum limits are specified through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise stated the following conditions apply: VIN = 13.5 V.  VIN1 shorted to VIN2 = VIN.  VOUT is converter output voltage.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE AND CURRENT
VIN_OPERATE Input operating voltage(3) Needed to start up 3.95 V
Once operating 3.0
VIN_OPERATE_H Hysteresis(3) 1 V
IQ_VIN Operating quiescent current (not switching)(4) VFB = +5%, VBIAS = 5 V 9 18 µA
IQ Operating quiescent current (not switching); measured at VIN pin(1) VFB = +5%, VBIAS = 5 V 0.6 6 µA
IBIAS Current into BIAS pin (not switching, maximum at TJ = 125°C)(1) VFB = +5%, VBIAS = 5 V, Auto Mode 24 31.2 µA
ISD Shutdown quiescent current; measured at VIN pin EN = 0 V, TJ = 25℃ 0.6 6 µA
ENABLE
VEN Enable input threshold voltage - rising 1.263 V
VEN-ACC Enable input threshold voltage - rising deviation from typical -5  5 %
VEN-HYST Enable threshold hysteresis as percentage of VEN  (TYP) 24 28 32 %
VEN-WAKE Enable wake-up threshold 0.4 V
IEN Enable pin input current VIN = EN = 13.5 V 2.3 nA 
VEN_SYNC Edge height necessary to sync using EN/SYNC pin Rise/fall time <30 ns 2.4 V
LDO - VCC
VCC Internal VCC voltage VBIAS > 3.4  V, CCM Operation(3) 3.3 V
VBIAS = 3.1 V, Non-switching 3.1
VCC_UVLO Internal VCC input under voltage lock-out VCC rising under voltage threshold 3.6 V
VCC_UVLO_HYST Internal VCC input under voltage lock-out Hysteresis below VCC_UVLO 1.1 V
FEEDBACK
VFB_acc Initial reference voltage accuracy VIN = 3.3 V to 36 V, FPWM Mode -1 1 %
IFB Input current from FB to AGND  Adjustable versions only, FB = 1 V 10 nA
OSCILLATOR
fADJ Minimum adjustable frequency by RT or SYNC RT = 66.5 kΩ 0.18 0.2 0.22 MHz
Adjustable frequency by RT or SYNC with 400 kHz setting RT = 33.2 kΩ  0.36 0.4 0.44 MHz
Maximum adjustable frequency by RT or SYNC RT = 5.76 kΩ 1.98 2.2 2.42 MHz
fS SS Frequency span of spread spectrum operation - largest deviation from center frequency Spread spectrum active 2 %
fPSS Spread spectrum pattern frequency(3) Spread spectrum active, fSW = 2.1 MHz 1.5 Hz
MOSFETS
RDS(ON)_HS Power switch on-resistance High side MOSFET RDS(ON) 41 82 mΩ
RDS(ON)_LS Power switch on-resistance Low side MOSFET RDS(ON) 21 45 mΩ
VBOOT_UVLO Voltage on CBOOT pin compared to SW which will turn off high-side switch 2.1 V
CURRENT LIMITS
IL-HS High side switch current limit(2) Duty Cycle approaches 0% 8.9 10.3 11.5 A
IL-LS Low side switch current limit 6.1 7.1 8.1 A
IL-ZC Zero-cross current limit.  Positive  current direction is out of SW pin Auto Mode, static measurement 0.25 A
IL-NEG Negative current limit FPWM and SYNC Modes.   Positive current direction is out of SW pin. FPWM operation -3 A
IPK_MIN_0 Minimum peak command in Auto Mode / device current rating Pulse duration < 100 ns 25 %
IPK_MIN_100 Minimum peak command in Auto Mode / device current rating Pulse duration > 1 µs 12.5 %
VHICCUP Ratio of FB voltage to in-regulation FB voltage Not during soft start 40 %
POWER GOOD
PGDOV PGOOD upper threshold - rising % of VOUT setting 105 107 110 %
PGDU V PGOOD lower threshold - falling % of VOUT setting 92 94 96.5 %
PGDHYST PGOOD upper threshold (rising & falling) % of VOUT setting 1.3 %
VIN(PGD_VALID) Input voltage for proper PGOOD function 1.0 V
VPGD(LOW) Low level PGOOD function output voltage 46 µA pullup to PGOOD pin, VIN = 1.0 V, EN = 0 V 0.4 V
1 mA pullup to PGOOD pin, VIN = 13.5 V, EN = 0 V 0.4
2 mA pullup to PGOOD pin, VIN = 13.5 V, EN = 3.3 V 0.4
RPGD RDS(ON) of PGOOD output 1 mA pullup to PGOOD pin, EN = 0 V 17 40 Ω
1 mA pullup to PGOOD pin, EN = 3.3 V 40 90 Ω
IOV Pull down current at the SW node under over voltage condition 0.5 mA
THERMAL SHUTDOWN
TSD_R Thermal shutdown rising threshold(3) 158 168 180 ℃
TSD_HYST Thermal shutdown hysteresis(3) 10 ℃
(1) This is the current used by the device while not switching, open loop, with FB pulled to +5% of nominal.  It does not represent the total input current to the system while regulating. For additional information, reference the Systems Chracaterisitics Table and the Input Supply Current Section.
(2) High side current limit is function of duty factor. High side current limit is highest at small duty factor and less at higher duty factors.
(3) Parameter specified by design, statistical analysis and production testing of correlated parameters.
(4) IQ_VIN = IQ + IBIAS × (VOUT / VIN)