SNVSB75E december   2018  – august 2023 LM5155 , LM51551

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Description (continued)
  7. 6 Device Comparison Table
  8. 7 Pin Configuration and Functions
  9. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Line Undervoltage Lockout (UVLO/SYNC Pin)
      2. 9.3.2  High Voltage VCC Regulator (BIAS, VCC Pin)
      3. 9.3.3  Soft Start (SS Pin)
      4. 9.3.4  Switching Frequency (RT Pin)
      5. 9.3.5  Clock Synchronization (UVLO/SYNC Pin)
      6. 9.3.6  Current Sense and Slope Compensation (CS Pin)
      7. 9.3.7  Current Limit and Minimum On-time (CS Pin)
      8. 9.3.8  Feedback and Error Amplifier (FB, COMP Pin)
      9. 9.3.9  Power-Good Indicator (PGOOD Pin)
      10. 9.3.10 Hiccup Mode Overload Protection (LM51551 Only)
      11. 9.3.11 Maximum Duty Cycle Limit and Minimum Input Supply Voltage
      12. 9.3.12 MOSFET Driver (GATE Pin)
      13. 9.3.13 Overvoltage Protection (OVP)
      14. 9.3.14 Thermal Shutdown (TSD)
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode
      2. 9.4.2 Standby Mode
      3. 9.4.3 Run Mode
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Custom Design With WEBENCH® Tools
        2. 10.2.2.2 Recommended Components
        3. 10.2.2.3 Inductor Selection (LM)
        4. 10.2.2.4 Output Capacitor (COUT)
        5. 10.2.2.5 Input Capacitor
        6. 10.2.2.6 MOSFET Selection
        7. 10.2.2.7 Diode Selection
        8. 10.2.2.8 Efficiency Estimation
      3. 10.2.3 Application Curve
    3. 10.3 System Examples
    4. 10.4 Power Supply Recommendations
    5. 10.5 Layout
      1. 10.5.1 Layout Guidelines
      2. 10.5.2 Layout Examples
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
      2. 11.1.2 Development Support
        1. 11.1.2.1 Custom Design With WEBENCH® Tools
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  13. 12Mechanical, Packaging, and Orderable Information

9.3.12 MOSFET Driver (GATE Pin)

The device provides an N-channel MOSFET driver that can source or sink a peak current of 1.5 A. The peak sourcing current is larger when supplying an external VCC that is higher than the 6.75-V VCC regulation target. During start-up, especially when the input voltage range is below the VCC regulation target, the VCC voltage must be sufficient to completely enhance the MOSFET. If the MOSFET drive voltage is lower than the MOSFET gate plateau voltage during start-up, the boost converter may not start up properly and it can stick at the maximum duty cycle in a high power dissipation state. This condition can be avoided by selecting a lower threshold N-channel MOSFET switch and setting the VSUPPLY(ON) greater than 6 to 7 V. Since the internal VCC regulator has a limited sourcing capability, the MOSFET gate charge should satisfy the following inequality.

Equation 18. GUID-33A3671A-BF07-44C2-91D2-36CD6FE1E121-low.gif

An internal 1-MΩ resistor is connected between GATE and PGND to prevent a false turnon during shutdown. In boost topology, a switch node dV/dT must be limited during the 65-µs internal start-up delay to avoid a false turnon, which is caused by the coupling through CDG parasitic capacitance of the MOSFET.