SNVSC36A December   2021  – September 2024 LP5866

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7.     14
    8. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Time-Multiplexing Matrix
      2. 7.3.2 Analog Dimming (Current Gain Control)
      3. 7.3.3 PWM Dimming
      4. 7.3.4 ON and OFF Control
      5. 7.3.5 Data Refresh Mode
      6. 7.3.6 Full Addressable SRAM
      7. 7.3.7 Protections and Diagnostics
    4. 7.4 Device Functional Modes
    5. 7.5 Programming
    6. 7.6 Register Maps
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Application
      2. 8.2.2 Design Requirements
      3. 8.2.3 Detailed Design Procedure
        1. 8.2.3.1 Program Procedure
      4. 8.2.4 Application Performance Plots
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 Power Supply Recommendations
      2. 8.3.2 Power Supply Recommendations
      3. 8.3.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.4 Thermal Information

THERMAL METRIC (1)  LP5866, LP5866M UNIT
RKP (VQFN) DBT (TSSOP)
40 Pins 38 Pins
RθJA Junction-to-ambient thermal resistance 31.4 67.0 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 22.9 20.1 °C/W
RθJB Junction-to-board thermal resistance 12.0 27.4 °C/W
ΨJT Junction-to-top characterization parameter 0.3 1.0 °C/W
ΨJB Junction-to-board characterization parameter 12.0 27.0 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.5 n/a °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.