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TPS7H3014-SP Radiation-Hardened, 14V, 4-Channel Sequencer
SNVSCE7B
January 2024 – June 2024
TPS7H3014-SP
PRODUCTION DATA
CONTENTS
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TPS7H3014-SP Radiation-Hardened, 14V, 4-Channel Sequencer
1
1
Features
2
Applications
3
Description
4
Device Options
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Timing Requirements
6.7
Quality Conformance Inspection
6.8
Typical Characteristics
7
Parameter Measurement Information
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.3.1
Input Voltage (IN), VLDO and REFCAP
8.3.1.1
Undervoltage Lockout (VPOR_IN < VIN < UVLO)
8.3.1.2
Power-On Reset (VIN < VPOR_IN )
8.3.2
SENSEx Inputs
8.3.2.1
VTH_SENSEX and VONx
8.3.2.2
IHYS_SENSEx and VOFFx
8.3.2.3
Top and Bottom Resistive Divider Design Equations
8.3.3
Output Stages (ENx,SEQ_DONE,PWRGD,PULL_UP1 and PULL_UP2)
8.3.4
User-Programmable TIMERS
8.3.4.1
DLY_TMR
8.3.4.2
REG_TMR
8.3.5
UP and DOWN
8.3.6
FAULT
8.3.7
State Machine
8.4
Daisy Chain
9
Application and Implementation
9.1
Application Information
9.2
Typical Application
9.2.1
Self Contained – Sequence UP and DOWN
9.2.1.1
Design Requirements
9.2.1.2
Detailed Design Procedure
9.2.1.2.1
Input Power Supplies and Decoupling Capacitors
9.2.1.2.2
UP and DOWN Thresholds
9.2.1.2.3
SENSEx Thresholds
9.2.1.3
Application Curves
9.2.2
Sequencing of Negative Voltage Rails
9.2.2.1
Negative Voltage Design Equations
9.3
Externally Induced System RESET
9.4
Power Supply Recommendations
9.5
Layout
9.5.1
Layout Guidelines
9.5.2
Layout Example
10
Device and Documentation Support
10.1
Documentation Support
10.1.1
Related Documentation
10.2
Receiving Notification of Documentation Updates
10.3
Support Resources
10.4
Trademarks
10.5
Electrostatic Discharge Caution
10.6
Glossary
11
Revision History
12
Mechanical, Packaging, and Orderable Information
IMPORTANT NOTICE
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Data Sheet
TPS7H3014-SP Radiation-Hardened, 14V, 4-Channel Sequencer
1
Features
Radiation performance:
Radiation hardness assurance (RHA) up to a total ionizing dose (TID) of 100krad(Si)
Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 75MeV-cm
2
/mg
Single-event functional interrupt (SEFI) and single-event transient (SET) characterized up to LET = 75MeV-cm
2
/mg
Wide supply IN voltage range (V
IN
): 3V to 14V
Sequence and monitor up to 4 voltage rails with a single device
Daisy chain capability for extended channel count
Single resistor programmable global timers for:
Sequence up and down delay
Sequence up time to regulation
Reverse order sequence down
Precision threshold voltage and hysteresis current
V
TH_SENSEx
of
599mV
±
1%
across: voltage, temperature, and radiation (TID)
I
HYS_SENSEx
of
24μA
±
3%
across: voltage, temperature, and radiation (TID)
Push-pull outputs with programmable pull-up voltage between 1.6V to 7V
Global ENx pull-up domain (V
PULL_UP1
)
Common SEQ_DONE and PWRGD pull-up domain (V
PULL_UP2
)
FAULT
open drain output for monitoring of state machine induced faults
Available in military (–55°C to 125°C) temperature range
2
Applications
Satellite electrical power system (EPS)
Control sequence and monitoring for complex digital processors such as: FPGAs, SoCs, AFEs, and power systems for space applications
