SNVSCE7B January   2024  – June 2024 TPS7H3014-SP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Options
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Quality Conformance Inspection
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Voltage (IN), VLDO and REFCAP
        1. 8.3.1.1 Undervoltage Lockout (VPOR_IN < VIN < UVLO)
        2. 8.3.1.2 Power-On Reset (VIN < VPOR_IN )
      2. 8.3.2 SENSEx Inputs
        1. 8.3.2.1 VTH_SENSEX and VONx
        2. 8.3.2.2 IHYS_SENSEx and VOFFx
        3. 8.3.2.3 Top and Bottom Resistive Divider Design Equations
      3. 8.3.3 Output Stages (ENx,SEQ_DONE,PWRGD,PULL_UP1 and PULL_UP2)
      4. 8.3.4 User-Programmable TIMERS
        1. 8.3.4.1 DLY_TMR
        2. 8.3.4.2 REG_TMR
      5. 8.3.5 UP and DOWN
      6. 8.3.6 FAULT
      7. 8.3.7 State Machine
    4. 8.4 Daisy Chain
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Self Contained – Sequence UP and DOWN
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Input Power Supplies and Decoupling Capacitors
          2. 9.2.1.2.2 UP and DOWN Thresholds
          3. 9.2.1.2.3 SENSEx Thresholds
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Sequencing of Negative Voltage Rails
        1. 9.2.2.1 Negative Voltage Design Equations
    3. 9.3 Externally Induced System RESET
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

1 Features

  • Radiation performance:
    • Radiation hardness assurance (RHA) up to a total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 75MeV-cm2/mg
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized up to LET = 75MeV-cm2/mg
  • Wide supply IN voltage range (VIN): 3V to 14V
  • Sequence and monitor up to 4 voltage rails with a single device
    • Daisy chain capability for extended channel count
  • Single resistor programmable global timers for:
    • Sequence up and down delay
    • Sequence up time to regulation
  • Reverse order sequence down
  • Precision threshold voltage and hysteresis current
    • VTH_SENSEx of 599mV ±1% across: voltage, temperature, and radiation (TID)
    • IHYS_SENSEx of 24μA ±3% across: voltage, temperature, and radiation (TID)
  • Push-pull outputs with programmable pull-up voltage between 1.6V to 7V
    • Global ENx pull-up domain (VPULL_UP1)
    • Common SEQ_DONE and PWRGD pull-up domain (VPULL_UP2)
  • FAULT open drain output for monitoring of state machine induced faults
  • Available in military (–55°C to 125°C) temperature range