SNVSCG7 November   2024 LM5190

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Input Voltage Range (VIN)
      2. 6.3.2  High-Voltage Bias Supply Regulator (VCC, BIAS)
      3. 6.3.3  Precision Enable (EN)
      4. 6.3.4  Power-Good Monitor (PGOOD)
      5. 6.3.5  Switching Frequency (RT)
      6. 6.3.6  Low Dropout Mode
      7. 6.3.7  Dual Random Spread Spectrum (DRSS)
      8. 6.3.8  Soft Start
      9. 6.3.9  Output Voltage Setpoint (FB)
      10. 6.3.10 Minimum Controllable On Time
      11. 6.3.11 Inductor Current Sense (ISNS+, VOUT)
      12. 6.3.12 Voltage Loop Error Amplifier
      13. 6.3.13 Current Monitor, Programmable Current Limit, and Current Loop Error Amplifier (IMON/ILIM, ISET)
      14. 6.3.14 Dual Loop Architecture
      15. 6.3.15 PWM Comparator
      16. 6.3.16 Slope Compensation
      17. 6.3.17 Hiccup Mode Current Limiting
      18. 6.3.18 High-Side and Low-Side Gate Drivers (HO, LO)
    4. 6.4 Device Functional Modes
      1. 6.4.1 Sleep Mode
      2. 6.4.2 Forced PWM Mode and Synchronization (FPWM/SYNC)
      3. 6.4.3 Thermal Shutdown
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Power Train Components
        1. 7.1.1.1 Buck Inductor
        2. 7.1.1.2 Output Capacitors
        3. 7.1.1.3 Input Capacitors
        4. 7.1.1.4 Power MOSFETs
        5. 7.1.1.5 EMI Filter
      2. 7.1.2 Error Amplifier and Compensation
    2. 7.2 Typical Applications
      1. 7.2.1 High Efficiency 400kHz CC-CV Regulator
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 Buck Inductor
          2. 7.2.1.2.2 Current-Sense Resistance
          3. 7.2.1.2.3 Output Capacitors
          4. 7.2.1.2.4 Input Capacitors
          5. 7.2.1.2.5 Frequency Set Resistor
          6. 7.2.1.2.6 Feedback Resistors
        3. 7.2.1.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Power Stage Layout
        2. 7.4.1.2 Gate-Drive Layout
        3. 7.4.1.3 PWM Controller Layout
        4. 7.4.1.4 Thermal Design and Layout
        5. 7.4.1.5 Ground Plane Design
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
        1. 8.2.1.1 PCB Layout Resources
        2. 8.2.1.2 Thermal Design Resources
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

6.3.18 High-Side and Low-Side Gate Drivers (HO, LO)

The LM5190 contains gate drivers and an associated high-side level shifter to drive the external N-channel power MOSFETs. The high-side gate driver works in conjunction with an internal bootstrap diode DBOOT and bootstrap capacitor CBOOT. During the conduction interval of the low-side MOSFET, the SW voltage is approximately 0V and CBOOT charges from VCC through the internal DBOOT. TI recommends a 0.1μF ceramic capacitor connected with short traces between the CBOOT and SW pins.

The HO and LO outputs are controlled with an adaptive dead-time methodology so that both outputs (HO and LO) are never on at the same time, preventing cross conduction. Before the LO driver output is allowed to turn on, the adaptive dead-time logic first disables HO and waits for the HO voltage to drop below 1.5V typical. LO is allowed to turn on after a small delay (HO fall to LO rising delay). Similarly, the HO turn-on is delayed until the LO voltage has dropped below 1.5V. This technique makes sure of adequate dead-time for any size N-channel power MOSFET implementations, including parallel MOSFET configurations.

Caution is advised when adding series gate resistors, as this can impact the effective dead-time. The selected high-side MOSFET determines the appropriate bootstrap capacitance value CBOOT in accordance with Equation 13.

Equation 13. C B O O T = Q G ∆ V C B O O T

where

  • QG is the total gate charge of the high-side MOSFET at the applicable gate drive voltage.
  • ΔVCBOOT is the voltage variation of the high-side MOSFET driver after turn-on.

To determine CBOOT, choose ΔVCBOOT such that the available gate drive voltage is not significantly impacted. An acceptable range of ΔVCBOOT is 100mV to 300mV. The bootstrap capacitor must be a low-ESR ceramic capacitor, typically 0.1µF. Select FETs to make sure that the minimum input supply voltage is higher than gate plateau voltage of the FET plus 0.5V so that the FET works in the ohmic region when turned on.

When the LM5190 is configured for a target output voltage smaller than 7.5V, the internal bootstrap UV circuit can source a 25uA current out of the SW pin. In the light load or no load case where the resistance of the feedback divider is not low enough to sink the extra amount of current, some dummy load is required to bleed off the charge on the output capacitors.