SNVSCU2A August   2024  – August 2024 LM5137-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
    1. 5.1 Wettable Flanks
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Input Voltage Range (VIN)
      2. 7.3.2  Bias Supply Regulator (VCC, BIAS1/VOUT1, VDDA)
      3. 7.3.3  Precision Enable (EN1, EN2)
      4. 7.3.4  Switching Frequency (RT)
      5. 7.3.5  Pulse Frequency Modulation and Synchronization (PFM/SYNC)
      6. 7.3.6  Synchronization Out (SYNCOUT)
      7. 7.3.7  Dual Random Spread Spectrum (DRSS)
      8. 7.3.8  Configurable Soft Start (RSS)
      9. 7.3.9  Output Voltage Setpoints (FB1, FB2)
      10. 7.3.10 Minimum Controllable On-Time
      11. 7.3.11 Error Amplifier and PWM Comparator (FB1, FB2, COMP1, COMP2)
        1. 7.3.11.1 Slope Compensation
      12. 7.3.12 Inductor Current Sense (ISNS1+, BIAS1/VOUT1, ISNS2+, VOUT2)
        1. 7.3.12.1 Shunt Current Sensing
        2. 7.3.12.2 Inductor DCR Current Sensing
      13. 7.3.13 MOSFET Gate Drivers (HO1, HO2, LO1, LO2)
      14. 7.3.14 Output Configurations (CNFG)
        1. 7.3.14.1 Independent Dual-Output Operation
        2. 7.3.14.2 Single-Output Interleaved Operation
        3. 7.3.14.3 Single-Output Multiphase Operation
    4. 7.4 Device Functional Modes
      1. 7.4.1 Sleep Mode
      2. 7.4.2 PFM Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Power Train Components
        1. 8.1.1.1 Power MOSFETs
        2. 8.1.1.2 Buck Inductor
        3. 8.1.1.3 Output Capacitors
        4. 8.1.1.4 Input Capacitors
        5. 8.1.1.5 EMI Filter
      2. 8.1.2 Error Amplifier and Compensation
    2. 8.2 Typical Applications
      1. 8.2.1 Design 1 – Dual 5V and 3.3V, 20A Buck Regulator for 12V Automotive Battery Applications
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Custom Design With WEBENCH® Tools
          2. 8.2.1.2.2 Custom Design With Excel Quickstart Tool
          3. 8.2.1.2.3 Inductor Calculations
          4. 8.2.1.2.4 Shunt Resistors
          5. 8.2.1.2.5 Ceramic Output Capacitors
          6. 8.2.1.2.6 Ceramic Input Capacitors
          7. 8.2.1.2.7 Feedback Resistors
          8. 8.2.1.2.8 Input Voltage UVLO Resistors
          9. 8.2.1.2.9 Compensation Components
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Design 2 – Two-Phase, Single-Output Buck Regulator for Automotive ADAS Applications
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
      3. 8.2.3 Design 3 – 12V, 20A, 400kHz, Two-Phase Buck Regulator for 48V Automotive Applications
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
        3. 8.2.3.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Power Stage Layout
        2. 8.4.1.2 Gate Drive Layout
        3. 8.4.1.3 PWM Controller Layout
        4. 8.4.1.4 Thermal Design and Layout
        5. 8.4.1.5 Ground Plane Design
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Third-Party Products Disclaimer
      2. 9.1.2 Development Support
        1. 9.1.2.1 Custom Design With WEBENCH® Tools
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
        1. 9.2.1.1 PCB Layout Resources
        2. 9.2.1.2 Thermal Design Resources
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Tape and Reel Information

7.3.13 MOSFET Gate Drivers (HO1, HO2, LO1, LO2)

The LM5137-Q1 contains N-channel MOSFET gate drivers and associated high-side level shifters to drive the external N-channel MOSFETs. The high-side gate driver works in conjunction with the integrated bootstrap diode and external bootstrap capacitor CBOOT. During the conduction interval of the low-side MOSFET, the SW voltage is approximately 0V and CBOOT charges from VCC through the diode.

The LM5137-Q1 controls the HO and LO outputs with an adaptive dead-time methodology such that both outputs (HO and LO) are never enabled at the same time, preventing cross conduction. When the controller commands LO to be enabled, the adaptive dead-time logic first disables HO and waits for the HO minus SW differential voltage to drop below 2V (typical). LO is then enabled after a small delay (HO fall to LO rising delay). Similarly, the HO turn-on is delayed until the LO voltage has dropped below 2V. HO is then enabled after a small delay (LO falling to HO rising delay). This technique provides adequate dead-time for any size N-channel MOSFET component or parallel MOSFET configurations.

As VIN approaches the VOUT setpoint, the LM5137-Q1 turns on the integrated charge pump to keep the high-side MOSFET on, thus achieving true 100% duty cycle. This action allows for the lowest possible dropout voltage from input to output. Caution is advised when adding series gate resistors, as this can decrease the effective dead-time. The selected N-channel high-side MOSFET determines the appropriate bootstrap capacitance values CBOOT in accordance with Equation 10.

Equation 10. LM5137-Q1

where

  • QG is the total gate charge of the high-side MOSFET at the applicable gate drive voltage, normally 5V
  • ΔVCBOOT is the voltage variation of the high-side MOSFET driver after turn-on

To determine CBOOT, choose ΔVCBOOT so that the available gate drive voltage is not significantly impacted. An acceptable range of ΔVCBOOT is 100mV to 200mV. The bootstrap capacitor must be a low-ESR ceramic capacitor, typically 0.1µF. Given the nominal VCC voltage of 5V, use logic-level power MOSFETs with RDS(on) rated at VGS = 4.5V.