SPMA078 March 2021 TM4C1290NCPDT , TM4C1290NCPDT , TM4C1290NCZAD , TM4C1290NCZAD , TM4C1292NCPDT , TM4C1292NCPDT , TM4C1292NCZAD , TM4C1292NCZAD , TM4C1294KCPDT , TM4C1294KCPDT , TM4C1294NCPDT , TM4C1294NCPDT , TM4C1294NCZAD , TM4C1294NCZAD , TM4C1297NCZAD , TM4C1297NCZAD , TM4C1299KCZAD , TM4C1299KCZAD , TM4C1299NCZAD , TM4C1299NCZAD , TM4C129CNCPDT , TM4C129CNCPDT , TM4C129CNCZAD , TM4C129CNCZAD , TM4C129DNCPDT , TM4C129DNCPDT , TM4C129DNCZAD , TM4C129DNCZAD , TM4C129EKCPDT , TM4C129EKCPDT , TM4C129ENCPDT , TM4C129ENCPDT , TM4C129ENCZAD , TM4C129ENCZAD , TM4C129LNCZAD , TM4C129LNCZAD , TM4C129XKCZAD , TM4C129XKCZAD , TM4C129XNCZAD , TM4C129XNCZAD
This project proposes a high endurance EEPROM model that combines software wear leveling with the hardware wear leveling for extended write-erase endurance. The plan is to use two physical sectors of the EEPROM flash, which is 16 blocks or 1024 bytes of the 6K bytes available. The use of two sectors will reduce the possibility of data loss when power is lost during programming or erase operations.
At the beginning of each dataset will be a control block that consists of the following four words: