SPNA249 june   2023 TMS570LC4357-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2SEE Mechanisms
  6. 3Test Device Information
  7. 4Irradiation Facility and Setup
  8. 5SEL Results
  9. 6Summary
  10.   References

References

  1. M. Shoga and D. Binder, “Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits”, IEEE Trans. Nulc. Sci., Vol. 33, Dec. 1986, pp. 1714-1717.
  2. G. Bruguier and J.M. Palau, “Single particle-induced latchup”, IEEE Trans. Nulc. Sci., Vol. 43(2), Mar. 1996, pp. 522-532.
  3. TAMU Radiation Effects Facility website. http://cyclotron.tamu.edu/ref/
  4. “The Stopping and Range of Ions in Matter” (SRIM) software simulation tools website. www.srim.org/index.htm#SRIMMENU.
  5. D.Kececioglu, “Reliability and Life Testing Handbook”, Vol.1, PTR Prentice Hall, New Jersey, 1993, pp. 186-193.
  6. ISDE CRÈME-MC website. https://creme.isde.vanderbilt.edu/CREME-MC
  7. A. J. Tylka, J. H. Adams, P. R. Boberg, et al., “CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code”, IEEE Trans. Nulc. Sci., Vol. 44(6), Dec. 1997, pp. 2150-2160.
  8. A. J. Tylka, W. F. Dietrich, and P. R. Boberg, “Probability distributions of high-energy solar-heavy-ion fluxes from IMP-8: 1973-1996”, IEEE Trans. Nulc. Sci., Vol. 44(6), Dec. 1997, pp. 2140-2149.