SPNK004 March   2024 TMS570LC4357-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
  5. 2Total Dose Test Setup
  6. 3Tested Parameters
  7. 4Total Ionizing Dose Characterization Test Results
  8. 5Appendix A: Effect of HDR Dose on ADC Leakage at VccAD = 5.25V
  9. 6Appendix B: Effect of HDR Dose & Time on Flash Memory Critical Parameters

Device Information

The TMS570LC4357-SEP is a high-performance Arm® Cortex® R-based microcontroller that features on-chip diagnostic features, including dual CPUs in lockstep, Built-In Self-Test (BIST) logic for CPU, the N2HET coprocessors, and for on-chip SRAMs, as well as ECC protection on the L1 caches, L2 flash, and SRAM memories. The device supports ECC or parity protection on peripheral memories and loopback capability on peripheral I/Os.

The TMS570LC4357 device features 4MB of integrated flash and 512KB of data RAM with single-bit error and double-bit error detection. The flash memory on this device is a nonvolatile, electrically erasable, and programmable memory implemented with a 64-bit-wide data bus interface. The flash operates on a 3.3V supply input (the same level as the I/O supply) for all read, program, and erase operations. The SRAM supports read and write accesses in byte, halfword, and word modes.

The device integrates two ARM Cortex-R5F floating-point CPUs, operating in lockstep, which offer 1.66 DMIPS/MHz and can run up to 300MHz, providing up to 498DMIPS. The device supports the big-endian (BE32) format.

With integrated safety features and a wide choice of communication and control peripherals, the TMS570LC4357-SEP device is designed for high-performance real-time control applications with safety-critical requirements.

For more information, see the product page.

Table 1-1 Device Information Table
Description Device Information
TI Device Number TMS570LC4357-SEP
Package 337 GWT (nFBGA)
Die Lot Number 6021835ADT; 2009899ADT
A/T Lot Number / Date Code 7378840 / 78AICXW; 2529561PHI / 2AC99TW
Quantity Tested 29 irradiated devices
Lot Accept/Reject Devices passed up to 30 krad(Si)
HDR Radiation Facility Aeroflex RADs, Colorado Springs, CO; TI CLAB, Dallas, TX
HDR Dose Level Aeroflex (Three units): 3 krad(Si) =
TI CLAB (20 units): 10krad(Si), 20krad(Si), 30krad(Si), 40krad(Si)
HDR Dose Rate Aeroflex: 65 rad(Si)/sec
TI CLAB: 188 rad(Si)/sec
HDR Radiation Source Gammacell 220 Excel (GC-220E) Co-60
LDR Radiation Facility Aeroflex RADs, Colorado Springs, CO
LDR Dose Level 20krad(Si), 30krad(Si)
LDR Dose Rate .01rad(Si) / s
LDR Radiation Source Gammacell JLSA 81-24 Co-60
Irradiation Temperature Ambient (room temperature)
Note: TI may provide technical, applications, or design advice, quality characterization, and reliability data or service, providing these items shall not expand or otherwise affect TI’s warranties as outlined in the Texas Instruments Incorporated Standard Terms and Conditions of Sale for Semiconductor Products, and no obligation or liability shall arise from TI’s provision of such items.