SPNK004 March   2024 TMS570LC4357-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
  5. 2Total Dose Test Setup
  6. 3Tested Parameters
  7. 4Total Ionizing Dose Characterization Test Results
  8. 5Appendix A: Effect of HDR Dose on ADC Leakage at VccAD = 5.25V
  9. 6Appendix B: Effect of HDR Dose & Time on Flash Memory Critical Parameters

3 Tested Parameters

Table 3-1 and Table 3-2 list critical parametric tests with significant shift pre- and post irradiation, as measured on ATE (Automated Test Equipment) in this study.

Table 3-1 Data Sheet Parameter Table
Parameter Test Description Data Sheet Literature Number: SPNS195
MIN MAX UNIT
ADC LEAKHI MOFF ADC Leakage Hi-Range; analog off at VccAD = 5.25V -0.25 1 μA
ADC LEAKMID MOFF ADC Leakage Mid-Range; analog off at VccAD = 5.25V -0.25 .25 μA
ADC LEAKLO MOFF ADC Leakage Low-Range; analog off at VccAD = 5.25V -1 .25 μA
ADC LEAKHI MON ADC Bias Hi-Range; analog on at VccAD = 5.25V -5 18 μA
ADC VA525 LEAKMID MON ADC Bias Mid-Range; analog on at VccAD = 5.25V -5 3 μA
ADC VA525 LEAKLO MON ADC Bias Low-Range; analog on at VccAD = 5.25V -12 3 μA
Table 3-2 TI Test Parameter Table
Parameter Test Description TI-Specified
MIN MAX UNIT
B0 ERS PLS Flash pump pulses required to erase Bank0 (2MB) NA 2000 N(cycles)
B1 ERS PLS Flash pump pulses required to erase Bank1 (2MB) NA 2000 N(cycles)
B2 ERS PLS Flash pump pulses required to erase Bank2 (128KB) NA 4000 N(cycles)
VHV ER MN Flash pump volts during erase cycle at Vmin 10.25 14 V
VHV ER MX Flash pump volts during erase cycle at Vmax 10.25 14 V
VHV PG MN Flash pump volts during program cycle at Vmin 8.9 12 V
VHV PV MN Flash pump volts during program verify cycle at Vmin 2.85 3.85 V
VREAD MN Flash pump volts during read cycle at Vmin 2.5 3.5 V