SPNK004 March   2024 TMS570LC4357-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
  5. 2Total Dose Test Setup
  6. 3Tested Parameters
  7. 4Total Ionizing Dose Characterization Test Results
  8. 5Appendix A: Effect of HDR Dose on ADC Leakage at VccAD = 5.25V
  9. 6Appendix B: Effect of HDR Dose & Time on Flash Memory Critical Parameters

Abstract

This report discusses the radiation characterization results of the TMS570LC4357-SEP ARM Cortex-R based microcontroller. The study was done to determine Total Ionizing Dose (TID) effects under low dose rate (LDR, unbiased) and high dose rate (HDR, biased) conditions. All samples passed post-irradiation electrical tests within the specified data sheet limits up to 30krad(Si) LDR and HDR. TID effects on ADC (Analog to Digital Converter) and Flash Memory Program and Erase Cycles are shown at differing HDR (High Dose Rate, biased) conditions. This report also functions as the RLAT report for TI lot number (2009899ADT).