SPRAD61A March   2023  – November 2023 AM2732 , AM2732 , AM2732-Q1 , AM2732-Q1

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
    1. 1.1 Acronyms
  5. 2 Power
    1. 2.1 Discrete DC-DC Power Solution
    2. 2.2 Integrated PMIC Power Solution
    3. 2.3 Power Decoupling and Filtering
    4. 2.4 Power Consumption
  6. 3 Clocking
    1. 3.1 Crystal and Oscillator Input Options
    2. 3.2 Output Clock Generation
    3. 3.3 Crystal Selection and Shunt Capacitance
    4. 3.4 Crystal Placement and Routing
  7. 4 Resets
  8. 5 Bootstrapping
    1. 5.1 SOP Signal Implementation
    2. 5.2 QSPI Memory Controller Implementation
    3. 5.3 ROM QSPI Boot Requirements
  9. 6 JTAG Emulators and Trace
  10. 7 Multiplexed Peripherals
  11. 8 Digital Peripherals
    1. 8.1 General Digital Peripheral Routing Guidelines
  12. 9 Layer Stackup
    1. 9.1 TMDS273GPEVM Layer Stackup
      1. 9.1.1 TMDS273GPEVM Key Stackup Features
    2. 9.2 Four Layer ZCE Example Layer Stackup
      1. 9.2.1 ZCE Four Layer Example Key Stackup Features
    3. 9.3 Four Layer NZN Example Layer Stackup
      1. 9.3.1 NZN Four Layer Example Key Stackup Features
  13. 10Vias
  14. 11BGA Power Fan-Out and Decoupling Placement
    1. 11.1 Ground Return
      1. 11.1.1 Ground Return - TMDS273GPEVM
      2. 11.1.2 Ground Return - ZCE Four Layer Example
      3. 11.1.3 Ground Return - NZN Four Layer Example
    2. 11.2 1.2 V Core Digital Power
      1. 11.2.1 1.2 V Core Digital Power Key Layout Considerations
        1. 11.2.1.1 1.2V Core Layout - TMDS273GPEVM
        2. 11.2.1.2 1.2V Core Layout - ZCE Four Layer Example
        3. 11.2.1.3 1.2V Core Layout - NZN Four Layer Example
    3. 11.3 3.3 V Digital and Analog Power
      1. 11.3.1 3.3 V Digital and Analog Power Key Layout Considerations
        1. 11.3.1.1 3.3V Digital and Analog Layout - TMDS273GPEVM
        2. 11.3.1.2 3.3V Digital and Analog Layout - ZCE Four Layer Example
        3. 11.3.1.3 3.3V Digital and Analog Layout - NZN Four Layer Example
    4. 11.4 1.8 V Digital and Analog Power
      1. 11.4.1 1.8 V Digital and Analog Power Key Layout Considerations
        1. 11.4.1.1 1.8V Digital and Analog Layout - TMDS273GPEVM
        2. 11.4.1.2 1.8V Digital and Analog Layout - ZCE Four Layer Example
        3. 11.4.1.3 1.8V Digital and Analog Layout - NZN Four Layer Example
  15. 12References
  16. 13Revision History

5.3 ROM QSPI Boot Requirements

For the AM273x device, ROM code expects the following QSPI flash memory features:

  • The flash device should be compatible with 3.3V LVCMOS signaling levels provided by the AM273x device
  • Ensure the flash device is set to write-protect mode disabled and hold-mode disabled.
    • This is usually a pull-up resistor option on the D1 and D2 pins of the flash device.
    • Ensure proper pull-up resistors are applied such that this correct operating state is selected.
  • The flash device be able to support Quad Output Fast Read (opcode 0x6B)
  • Flash must be able to support Fast Read in Single Mode (opcode 0x0B)
  • Device should allow 8 “dummy” clock cycles for setting up the initial address during the previously mentioned read operations
  • Flash must support 3-byte (24 bit) addressing mode by default
  • Flash memory size should be in the 2.5MB-4MB range, but it is not recommended to exceed the 16MB range to ensure correct operation

The following list of flash memory devices have been tested with the AM273x MCU for compatibility. For the above compatibility requirements, check the specific flash device-specific data sheet.

Table 5-3 QSPI Devices Compatible with AM273x
Manufacturer Flash Memory Devices
Infineon S25FL128S/S25FL256S series
Winbond W25Q series
GigaDevice GD25 series
Macronix MX25xxx35 series
Note: The GD25B64CWAG device from GigaDevice was utilized on the AM273x GPEVM.