SWRS181D September   2015  – July 2018 CC1310

PRODUCTION DATA.  

  1. 1Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2Revision History
  3. 3Device Comparison
    1. 3.1 Related Products
  4. 4Terminal Configuration and Functions
    1. 4.1 Pin Diagram – RSM Package
    2. 4.2 Signal Descriptions – RSM Package
    3. 4.3 Pin Diagram – RHB Package
    4. 4.4 Signal Descriptions – RHB Package
    5. 4.5 Pin Diagram – RGZ Package
    6. 4.6 Signal Descriptions – RGZ Package
  5. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Power Consumption Summary
    5. 5.5  RF Characteristics
    6. 5.6  Receive (RX) Parameters, 861 MHz to 1054 MHz
    7. 5.7  Receive (RX) Parameters, 431 MHz to 527 MHz
    8. 5.8  Transmit (TX) Parameters, 861 MHz to 1054 MHz
    9. 5.9  Transmit (TX) Parameters, 431 MHz to 527 MHz
    10. 5.10 PLL Parameters
    11. 5.11 ADC Characteristics
    12. 5.12 Temperature Sensor
    13. 5.13 Battery Monitor
    14. 5.14 Continuous Time Comparator
    15. 5.15 Low-Power Clocked Comparator
    16. 5.16 Programmable Current Source
    17. 5.17 DC Characteristics
    18. 5.18 Thermal Characteristics
    19. 5.19 Timing and Switching Characteristics
      1. 5.19.1 Reset Timing
        1. Table 5-1 Reset Timing
      2. 5.19.2 Wakeup Timing
        1. Table 5-2 Wakeup Timing
      3. 5.19.3 Clock Specifications
        1. Table 5-3 24-MHz Crystal Oscillator (XOSC_HF)
        2. Table 5-4 32.768-kHz Crystal Oscillator (XOSC_LF)
        3. Table 5-5 48-MHz RC Oscillator (RCOSC_HF)
        4. Table 5-6 32-kHz RC Oscillator (RCOSC_LF)
      4. 5.19.4 Flash Memory Characteristics
        1. Table 5-7 Flash Memory Characteristics
      5. 5.19.5 Synchronous Serial Interface (SSI) Characteristics
        1. Table 5-8 Synchronous Serial Interface (SSI) Characteristics
    20. 5.20 Typical Characteristics
  6. 6Detailed Description
    1. 6.1  Overview
    2. 6.2  Main CPU
    3. 6.3  RF Core
    4. 6.4  Sensor Controller
    5. 6.5  Memory
    6. 6.6  Debug
    7. 6.7  Power Management
    8. 6.8  Clock Systems
    9. 6.9  General Peripherals and Modules
    10. 6.10 Voltage Supply Domains
    11. 6.11 System Architecture
  7. 7Application, Implementation, and Layout
    1. 7.1 Application Information
    2. 7.2 TI Design or Reference Design
  8. 8Device and Documentation Support
    1. 8.1  Device Nomenclature
    2. 8.2  Tools and Software
    3. 8.3  Documentation Support
    4. 8.4  Texas Instruments Low-Power RF Website
    5. 8.5  Additional Information
    6. 8.6  Community Resources
    7. 8.7  Trademarks
    8. 8.8  Electrostatic Discharge Caution
    9. 8.9  Export Control Notice
    10. 8.10 Glossary
  9. 9Mechanical, Packaging, and Orderable Information
    1. 9.1 Packaging Information

Table 5-7 Flash Memory Characteristics

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Supported flash erase cycles before failure 100 k Cycles
Flash page or sector erase current Average delta current 12.6 mA
Flash page or sector erase time(1) 8 ms
Flash page or sector size 4 KB
Flash write current Average delta current, 4 bytes at a time 8.15 mA
Flash write time(1) 4 bytes at a time 8 µs
(1) This number is dependent on flash aging and increases over time and erase cycles.