SWRS181D September   2015  – July 2018 CC1310

PRODUCTION DATA.  

  1. 1Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2Revision History
  3. 3Device Comparison
    1. 3.1 Related Products
  4. 4Terminal Configuration and Functions
    1. 4.1 Pin Diagram – RSM Package
    2. 4.2 Signal Descriptions – RSM Package
    3. 4.3 Pin Diagram – RHB Package
    4. 4.4 Signal Descriptions – RHB Package
    5. 4.5 Pin Diagram – RGZ Package
    6. 4.6 Signal Descriptions – RGZ Package
  5. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Power Consumption Summary
    5. 5.5  RF Characteristics
    6. 5.6  Receive (RX) Parameters, 861 MHz to 1054 MHz
    7. 5.7  Receive (RX) Parameters, 431 MHz to 527 MHz
    8. 5.8  Transmit (TX) Parameters, 861 MHz to 1054 MHz
    9. 5.9  Transmit (TX) Parameters, 431 MHz to 527 MHz
    10. 5.10 PLL Parameters
    11. 5.11 ADC Characteristics
    12. 5.12 Temperature Sensor
    13. 5.13 Battery Monitor
    14. 5.14 Continuous Time Comparator
    15. 5.15 Low-Power Clocked Comparator
    16. 5.16 Programmable Current Source
    17. 5.17 DC Characteristics
    18. 5.18 Thermal Characteristics
    19. 5.19 Timing and Switching Characteristics
      1. 5.19.1 Reset Timing
        1. Table 5-1 Reset Timing
      2. 5.19.2 Wakeup Timing
        1. Table 5-2 Wakeup Timing
      3. 5.19.3 Clock Specifications
        1. Table 5-3 24-MHz Crystal Oscillator (XOSC_HF)
        2. Table 5-4 32.768-kHz Crystal Oscillator (XOSC_LF)
        3. Table 5-5 48-MHz RC Oscillator (RCOSC_HF)
        4. Table 5-6 32-kHz RC Oscillator (RCOSC_LF)
      4. 5.19.4 Flash Memory Characteristics
        1. Table 5-7 Flash Memory Characteristics
      5. 5.19.5 Synchronous Serial Interface (SSI) Characteristics
        1. Table 5-8 Synchronous Serial Interface (SSI) Characteristics
    20. 5.20 Typical Characteristics
  6. 6Detailed Description
    1. 6.1  Overview
    2. 6.2  Main CPU
    3. 6.3  RF Core
    4. 6.4  Sensor Controller
    5. 6.5  Memory
    6. 6.6  Debug
    7. 6.7  Power Management
    8. 6.8  Clock Systems
    9. 6.9  General Peripherals and Modules
    10. 6.10 Voltage Supply Domains
    11. 6.11 System Architecture
  7. 7Application, Implementation, and Layout
    1. 7.1 Application Information
    2. 7.2 TI Design or Reference Design
  8. 8Device and Documentation Support
    1. 8.1  Device Nomenclature
    2. 8.2  Tools and Software
    3. 8.3  Documentation Support
    4. 8.4  Texas Instruments Low-Power RF Website
    5. 8.5  Additional Information
    6. 8.6  Community Resources
    7. 8.7  Trademarks
    8. 8.8  Electrostatic Discharge Caution
    9. 8.9  Export Control Notice
    10. 8.10 Glossary
  9. 9Mechanical, Packaging, and Orderable Information
    1. 9.1 Packaging Information

6.5 Memory

The flash memory provides nonvolatile storage for code and data. The flash memory is in-system programmable.

The SRAM (static RAM) is split into two 4-KB blocks and two 6-KB blocks and can be used to store data and execute code. Retention of the RAM contents in standby mode can be enabled or disabled individually for each block to minimize power consumption. In addition, if flash cache is disabled, the 8-KB cache can be used as general-purpose RAM.

The ROM provides preprogrammed, embedded TI-RTOS kernel and Driverlib. The ROM also contains a bootloader that can be used to reprogram the device using SPI or UART.