SWRS219E October   2018  – June 2021 IWR6443 , IWR6843

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Functional Block Diagram
  5. 5 Revision History
  6. 6 Device Comparison
    1. 6.1 Related Products
  7. 7 Terminal Configuration and Functions
    1. 7.1 Pin Diagram
    2. 7.2 Signal Descriptions
      1. 7.2.1 Signal Descriptions - Digital
      2. 7.2.2 Signal Descriptions - Analog
    3. 7.3 Pin Attributes
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Power-On Hours (POH)
    4. 8.4  Recommended Operating Conditions
    5. 8.5  Power Supply Specifications
    6. 8.6  Power Consumption Summary
    7. 8.7  RF Specification
    8. 8.8  CPU Specifications
    9. 8.9  Thermal Resistance Characteristics for FCBGA Package [ABL0161]
    10. 8.10 Timing and Switching Characteristics
      1. 8.10.1  Power Supply Sequencing and Reset Timing
      2. 8.10.2  Input Clocks and Oscillators
        1. 8.10.2.1 Clock Specifications
      3. 8.10.3  Multibuffered / Standard Serial Peripheral Interface (MibSPI)
        1. 8.10.3.1 Peripheral Description
        2. 8.10.3.2 MibSPI Transmit and Receive RAM Organization
          1. 8.10.3.2.1 SPI Timing Conditions
          2. 8.10.3.2.2 SPI Master Mode Switching Parameters (CLOCK PHASE = 0, SPICLK = output, SPISIMO = output, and SPISOMI = input) (1) (1) (1)
          3. 8.10.3.2.3 SPI Master Mode Switching Parameters (CLOCK PHASE = 1, SPICLK = output, SPISIMO = output, and SPISOMI = input) (1) (1) (1)
        3. 8.10.3.3 SPI Slave Mode I/O Timings
          1. 8.10.3.3.1 SPI Slave Mode Switching Parameters (SPICLK = input, SPISIMO = input, and SPISOMI = output) (1) (1) (1)
        4. 8.10.3.4 Typical Interface Protocol Diagram (Slave Mode)
      4. 8.10.4  LVDS Interface Configuration
        1. 8.10.4.1 LVDS Interface Timings
      5. 8.10.5  General-Purpose Input/Output
        1. 8.10.5.1 Switching Characteristics for Output Timing versus Load Capacitance (CL) (1) (1)
      6. 8.10.6  Controller Area Network - Flexible Data-rate (CAN-FD)
        1. 8.10.6.1 Dynamic Characteristics for the CANx TX and RX Pins
      7. 8.10.7  Serial Communication Interface (SCI)
        1. 8.10.7.1 SCI Timing Requirements
      8. 8.10.8  Inter-Integrated Circuit Interface (I2C)
        1. 8.10.8.1 I2C Timing Requirements (1)
      9. 8.10.9  Quad Serial Peripheral Interface (QSPI)
        1. 8.10.9.1 QSPI Timing Conditions
        2. 8.10.9.2 Timing Requirements for QSPI Input (Read) Timings (1) (1)
        3. 8.10.9.3 QSPI Switching Characteristics
      10. 8.10.10 ETM Trace Interface
        1. 8.10.10.1 ETMTRACE Timing Conditions
        2. 8.10.10.2 ETM TRACE Switching Characteristics
      11. 8.10.11 Data Modification Module (DMM)
        1. 8.10.11.1 DMM Timing Requirements
      12. 8.10.12 JTAG Interface
        1. 8.10.12.1 JTAG Timing Conditions
        2. 8.10.12.2 Timing Requirements for IEEE 1149.1 JTAG
        3. 8.10.12.3 Switching Characteristics Over Recommended Operating Conditions for IEEE 1149.1 JTAG
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Subsystems
      1. 9.3.1 RF and Analog Subsystem
        1. 9.3.1.1 Clock Subsystem
        2. 9.3.1.2 Transmit Subsystem
        3. 9.3.1.3 Receive Subsystem
      2. 9.3.2 Processor Subsystem
      3. 9.3.3 Host Interface
      4. 9.3.4 Main Subsystem Cortex-R4F
      5. 9.3.5 DSP Subsystem
      6. 9.3.6 Hardware Accelerator
    4. 9.4 Other Subsystems
      1. 9.4.1 ADC Channels (Service) for User Application
        1. 9.4.1.1 GP-ADC Parameter
  10. 10Monitoring and Diagnostics
    1. 10.1 Monitoring and Diagnostic Mechanisms
      1. 10.1.1 Error Signaling Module
  11. 11Applications, Implementation, and Layout
    1. 11.1 Application Information
    2. 11.2 Reference Schematic
  12. 12Device and Documentation Support
    1. 12.1 Device Nomenclature
    2. 12.2 Tools and Software
    3. 12.3 Documentation Support
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Packaging Information
    2. 13.2 Tray Information for ABL, 10.4 × 10.4 mm

8.1 Absolute Maximum Ratings

PARAMETERS(1)(2)MINMAXUNIT
VDDIN1.2 V digital power supply–0.51.4V
VIN_SRAM1.2 V power rail for internal SRAM–0.51.4V
VNWA1.2 V power rail for SRAM array back bias–0.51.4V
VIOINI/O supply (3.3 V or 1.8 V): All CMOS I/Os would operate on this supply.–0.53.8V
VIOIN_181.8 V supply for CMOS IO–0.52V
VIN_18CLK1.8 V supply for clock module–0.52V
VIOIN_18DIFF1.8 V supply for LVDS port–0.52V
VIN_13RF11.3 V Analog and RF supply, VIN_13RF1 and VIN_13RF2 could be shorted on the board.–0.51.45V
VIN_13RF2
VIN_13RF1
(1-V Internal LDO bypass mode)		Device supports mode where external Power Management block can supply 1 V on VIN_13RF1 and VIN_13RF2 rails. In this configuration, the internal LDO of the device would be kept bypassed.–0.51.4V
VIN_13RF2
(1-V Internal LDO bypass mode)
VIN_18BB1.8-V Analog baseband power supply–0.52V
VIN_18VCO supply1.8-V RF VCO supply–0.52V
RX1-4 Externally applied power on RF inputs 10 dBm
TX1-3 Externally applied power on RF outputs(3) 10 dBm
Input and output voltage rangeDual-voltage LVCMOS inputs, 3.3 V or 1.8 V (Steady State)–0.3VVIOIN + 0.3V
Dual-voltage LVCMOS inputs, operated at 3.3 V/1.8 V
(Transient Overshoot/Undershoot) or external oscillator input		VIOIN + 20% up to
20% of signal period
CLKP, CLKMInput ports for reference crystal –0.52V
Clamp currentInput or Output Voltages 0.3 V above or below their respective power rails. Limit clamp current that flows through the internal diode protection cells of the I/O.–2020mA
TJOperating junction temperature range–40105°C
TSTGStorage temperature range after soldered onto PC board–55150°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to VSS, unless otherwise noted.
(3) This value is for an externally applied signal level on the TX. Additionally, a reflection coefficient up to Gamma = 1 can be applied on the TX output.