TIDT388 February   2024

 

  1.   1
  2.   Description
  3.   Features
  4.   Applications
  5. 1Test Prerequisites
    1. 1.1 Voltage and Current Requirements
    2. 1.2 Required Equipment
    3. 1.3 Considerations
  6. 2Testing and Results
    1. 2.1 Efficiency, Power Loss, and Load Regulation Graphs
    2. 2.2 Thermal Images
    3. 2.3 Dimensions
  7. 3Waveforms
    1. 3.1 Switching
    2. 3.2 Output Voltage Ripple
    3. 3.3 Load Transient Response
    4. 3.4 Start-Up
    5. 3.5 Overcurrent Protection
    6. 3.6 Efficiency and Power Loss Comparison of Varying Solutions

3.6 Efficiency and Power Loss Comparison of Varying Solutions

Figure 3-29 and Figure 3-30 show the difference in efficiency and power loss between Silicon FET and GaN FET designs operating at various switching frequencies. Results shown are taken at 48V input voltage.

The PMP23392 design uses LMG3100R017 GaN FETs switching at 300kHz / phase and XAL1010-152 inductors, exemplifying a small solution size. A variant of the PMP23392 design (using LMG3100R017 GaN FETs) except using ZE2652-AE inductors and switching at 150kHz / phase, exemplifies a high-efficiency solution.

PMP23420, a design equivalent to PMP23392, yet using Silicon FETs, ZE2652-AE inductors, and switching at 150kHz / phase, exemplifies a low-cost solution.


GUID-20240208-SS0I-RQZQ-W6MH-1WVVGKWJLVXV-low.png

Figure 3-29 Efficiency Comparison Between Silicon and GaN FET Solutions at Varying Switching Frequencies (5A to 60A Load)

GUID-20240208-SS0I-2G8H-C9GR-TZGJ2GRT4MSR-low.png

Figure 3-30 Power Loss Comparison Between Silicon and GaN FET Solutions at Varying Switching Frequencies (5A to 60A Load)