Description

This reference design describes a 3.5kW high-voltage to low-voltage DC-DC converter with 650V Gallium nitride (GaN) high-electron mobility transistors (HEMT). Using LMG3522R030 as primary switches makes the converter work at a high switching frequency. In this design, the converter uses a smaller size transformer. To ease the thermal performance of active clamping metal-oxide semiconductor field-effect transistors (MOSFETs), the converter uses two-channel active clamping circuits.