TIDT403A August   2024  – December 2024

 

  1.   1
  2.   Description
  3.   Features
  4.   Applications
  5. 1Test Prerequisites
    1. 1.1 Voltage and Current Requirements
    2. 1.2 Required Equipment
    3. 1.3 Considerations
    4. 1.4 Dimensions
  6. 2Testing and Results
    1. 2.1 Efficiency Graphs
    2. 2.2 Efficiency Data
    3. 2.3 Thermal Performance
    4. 2.4 Bode Plots
    5. 2.5 Light Load Efficiency Optimization
    6. 2.6 Switching Frequency Choice
  7. 3Waveforms
    1. 3.1 Switching
    2. 3.2 Output Voltage Ripple
    3. 3.3 Overcurrent Protection
    4. 3.4 Load Transients
    5. 3.5 Turn ON and OFF
  8. 4References
  9.   Trademarks

Description

This reference design describes a 3.5kW high-voltage to low-voltage DC-DC converter with 650V Gallium nitride (GaN) high-electron mobility transistors (HEMT). Using LMG3522R030 as primary switches makes the converter work at a high switching frequency. In this design, the converter uses a smaller size transformer. To ease the thermal performance of active clamping metal-oxide semiconductor field-effect transistors (MOSFETs), the converter uses two-channel active clamping circuits.