TIDUCL0 January 2017
Waveforms from Figure 27 to Figure 30 show the skew in VGS when comparing the parallel FETs. The gate drive current per FET is set to a 340-mA source and a 1-A sink current. The current controlled gate driver and low parasitic in the gate driver circuit path helps in dynamic characteristics during switching and ensures proper dynamic current sharing. The 3.3-Ω external gate resistor is used to limit the circulation current between the gate source of paralleled FETs. If a single MOSFET is used, the external gate resistor is not required.