TIDUD61E October 2020 – April 2021
The LMG3410R070 single-channel GaN power stage contains a 70-mΩ, 600-V GaN power transistor and specialized driver in an 8-mm × 8-mm QFN package. Direct drive architecture is used to create a normally-off device while providing the native switching performance of the GaN power transistor. When the LMG3410 is unpowered, an integrated low-voltage silicon MOSFET turns the GaN device off through its source. In normal operation, the low-voltage silicon MOSFET is held on continuously while the GaN device is gated directly from an internally-generated negative voltage supply. The integrated driver provides additional protection and convenience features. Fast overcurrent, overtemperature, and undervoltage lockout (UVLO) protections help create a fail-safe system. The device’s status is indicated by the FAULT output. An internal 5-V low-dropout regulator can provide up to 5 mA to supply external signal isolators. Finally, externally-adjustable slew rate and a low-inductance QFN package minimize switching loss, drain ringing, and electrical noise generation.