TIDUDG1 July   2022

 

  1.   Description
  2.   Resources
  3.   Features
  4.   Applications
  5.   5
  6. 1System Description
  7. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1 MIL-STD-1275E versus MIL-STD-1275D
      2. 2.2.2 Reverse Polarity Event
      3. 2.2.3 Voltage Spike Event
      4. 2.2.4 Voltage Spike Event: Component Selection
      5. 2.2.5 Voltage Surge Event
      6. 2.2.6 Voltage Surge Event: Component Selection
    3. 2.3 Highlighted Products
      1. 2.3.1 LM7480-Q1
      2. 2.3.2 LM5069
  8. 3Hardware, Testing Requirements and Test Results
    1. 3.1 Hardware Requirements
    2. 3.2 Test Setup
    3. 3.3 Test Results
  9. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 Schematics
      2. 4.1.2 BOM
    2. 4.2 Documentation Support
    3. 4.3 Support Resources
    4. 4.4 Trademarks

2.3.1 LM7480-Q1

The LM7480x-Q1 ideal diode controller drives and controls external back-to-back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON and OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 28-V military vehicle electrical systems. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path, the device allows load disconnect (ON and OFF control) and overvoltage protection using HGATE control. The LM7480x-Q1 independent gate drive topology, enables it to be configured in a common-source topology to provide load dump protection with reverse input protection.