TIDUDG1 July 2022
To protect against the voltage surge event defined in MIL-STD-1275E, a two-stage clamping solution is used to deal with the large amount of energy, while helping to reduce overall solution size, and to allow for power to be provided throughout the entire surge event.
The advantage of using a two-stage clamping topology is that it reduces the amount of thermal and electrical stress on the MOSFET. For example, in the reference design, the first stage clamps the voltage from 100 V to 50 V, and the second stage goes from 50 V to 33 V. This means that Q1 must be able to handle a maximum of 4.28 A with a drain-to-source voltage of 50 V during the surge event.
To determine the MOSFET, the safe operating stress of the MOSFET must be calculated. There is a MIL-STD-1275E SOA calculator that can be downloaded to help determine if a MOSFET is capable of handling the surge event. The first step is to approximate the surge envelope as a square pulse. To do that, find the total area under the curve (which equates to the energy) and then translate that to a square pulse for easier calculations.
Calculate the amount of power the MOSFET can withstand for 218 ms at 25°C. The following equations are used to determine the safe operating area (SOA) of the MOSFET.
To solve for m and a, the information comes from the SOA graph found in the MOSFET data sheet. From the SOA graph, the important information is the time and the current capabilities at 50 V. So in this design, the IXTT88N30P was used, and using it as an example, the SOA(t1) = 23 A for t1 = 0.01 s. While SOA(t2) = 13 A for t2 = 1 s. Plugging in the numbers for the IXTT88N30P results in an SOA of 15.7 A, meaning that the IXTT88N30P can handle 439.6 W for 252 ms. Which indicates this is more than enough for a 120-W system at 25°C.
The second part of the SOA calculation is to calculate for thermal derating. To determine the thermal derating, the following equations are used:
TA is the ambient temperature of the system. For example, calculating the SOA of the IXTT88N30P at a TA = 100°C results in an adjusted SOA of 6.15 A. Which means that the MOSFET can handle 172.2 W for 252 ms at 100°C.