TIDUE53I march   2018  – july 2023 TMS320F28P550SJ , TMS320F28P559SJ-Q1

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Highlighted Products
      1. 2.2.1  UCC21710
      2. 2.2.2  UCC5320
      3. 2.2.3  TMS320F28379D
      4. 2.2.4  AMC1305M05
      5. 2.2.5  OPA4340
      6. 2.2.6  LM76003
      7. 2.2.7  PTH08080W
      8. 2.2.8  TLV1117
      9. 2.2.9  OPA350
      10. 2.2.10 UCC14240
    3. 2.3 System Design Theory
      1. 2.3.1 Three-Phase T-Type Inverter
        1. 2.3.1.1 Architecture Overview
        2. 2.3.1.2 LCL Filter Design
        3. 2.3.1.3 Inductor Design
        4. 2.3.1.4 SiC MOSFETs Selection
        5. 2.3.1.5 Loss Estimations
        6. 2.3.1.6 Thermal Considerations
      2. 2.3.2 Voltage Sensing
      3. 2.3.3 Current Sensing
      4. 2.3.4 System Power Supplies
        1. 2.3.4.1 Main Input Power Conditioning
        2. 2.3.4.2 Isolated Bias Supplies
      5. 2.3.5 Gate Drivers
        1. 2.3.5.1 1200-V SiC MOSFETs
        2. 2.3.5.2 650-V SiC MOSFETs
        3. 2.3.5.3 Gate Driver Bias Supply
      6. 2.3.6 Control Design
        1. 2.3.6.1 Current Loop Design
        2. 2.3.6.2 PFC DC Bus Voltage Regulation Loop Design
  9. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Required Hardware and Software
      1. 3.1.1 Hardware
        1. 3.1.1.1 Test Hardware Required
        2. 3.1.1.2 Microcontroller Resources Used on the Design (TMS320F28379D)
        3. 3.1.1.3 F28377D, F28379D Control-Card Settings
        4. 3.1.1.4 Microcontroller Resources Used on the Design (TMS320F280039C)
      2. 3.1.2 Software
        1. 3.1.2.1 Getting Started With Firmware
          1. 3.1.2.1.1 Opening the CCS project
          2. 3.1.2.1.2 Digital Power SDK Software Architecture
          3. 3.1.2.1.3 Interrupts and Lab Structure
          4. 3.1.2.1.4 Building, Loading and Debugging the Firmware
        2. 3.1.2.2 Protection Scheme
        3. 3.1.2.3 PWM Switching Scheme
        4. 3.1.2.4 ADC Loading
    2. 3.2 Testing and Results
      1. 3.2.1 Lab 1
      2. 3.2.2 Testing Inverter Operation
        1. 3.2.2.1 Lab 2
        2. 3.2.2.2 Lab 3
        3. 3.2.2.3 Lab 4
      3. 3.2.3 Testing PFC Operation
        1. 3.2.3.1 Lab 5
        2. 3.2.3.2 Lab 6
        3. 3.2.3.3 Lab 7
      4. 3.2.4 Test Setup for Efficiency
      5. 3.2.5 Test Results
        1. 3.2.5.1 PFC Mode - 230 VRMS, 400 V L-L
          1. 3.2.5.1.1 PFC Start-up – 230 VRMS, 400 L-L AC Voltage
          2. 3.2.5.1.2 Steady State Results at 230 VRMS, 400 V L-L - PFC Mode
          3. 3.2.5.1.3 Efficiency and THD Results at 220 VRMS, 50 Hz – PFC Mode
          4. 3.2.5.1.4 Transient Test With Step Load Change
        2. 3.2.5.2 PFC Mode - 120 VRMS, 208 V L-L
          1. 3.2.5.2.1 Steady State Results at 120 VRMS, 208 V-L-L - PFC Mode
          2. 3.2.5.2.2 Efficiency and THD Results at 120 VRMS - PFC Mode
        3. 3.2.5.3 Inverter Mode
          1. 3.2.5.3.1 Inverter Closed Loop Results
          2. 3.2.5.3.2 Efficiency and THD Results - Inverter Mode
          3. 3.2.5.3.3 Inverter - Transient Test
      6. 3.2.6 Open Loop Inverter Test Results
  10. 4Design Files
    1. 4.1 Schematics
    2. 4.2 Bill of Materials
    3. 4.3 PCB Layout Recommendations
      1. 4.3.1 Layout Prints
    4. 4.4 Altium Project
    5. 4.5 Gerber Files
    6. 4.6 Assembly Drawings
  11. 5Trademarks
  12. 6About the Authors
  13. 7Revision History

2.3.1.4 SiC MOSFETs Selection

As shown in the architecture overview, the main switching device needs to support the full switching voltage. To support the 1000-V DC link voltage of this design, use 1200-V FETs; however, at this voltage, the migration to SiC is necessitated by several factors:

  • The switching speed of a 1200-V SiC MOSFET is significantly faster than a traditional IGBT, leading to a reduction in switching losses.
  • The reverse recovery charge is significantly smaller in the SiC MOSFET, resulting in reduced voltage and current overshoot.
  • A lower temperature dependence at full load due to reduced conduction loss.

The middle switches are only exposed to half of the DC link voltage, or 500 V in this design. As such, a 650-V device is acceptable. A full SiC design provides the best performance due to these same features. For this design, the reverse recovery loss and voltage overshoot limits the device selection. As such, a 1200-V SiC MOSFET + 650-V MOSFET design is used.

Conduction loss is mainly determined by the RDS(on) of the 1200-V SiC MOSFET and the on RDS(on) of the 650-V SiC MOSFET. The 75-mΩ SiC devices have a good high-temperature performance, and the RDS(on) only increases 40% at 150°C junction temperature. With the high temperature I-V curve in the data sheet, calculate the conduction loss on the devices.

Switching loss is a function of the switching frequency and switching energy of each switching transient, the switching energy is related with device current and voltage at the switching transient. Using the switching energy curve in the data sheet, one can estimate the total switching loss.

Similarly, the conduction loss and switching loss can be estimated for all the devices and efficiency can be estimated. With the thermal impedance information of the thermal system design, the proper device rating can be selected. The 1200-V/75-mΩ SiC MOSFET and 650-V/60-mΩ SiC MOSFET is a good tradeoff among thermal, efficiency and cost.