TIDUE53I march 2018 – july 2023 TMS320F28P550SJ , TMS320F28P559SJ-Q1
The primary source of lost efficiency in any inverter is going to be a result of the losses incurred in the switching devices. These losses are broken into three categories for each device:
Each of these are dictated by their own equation, and can be determined from the device data sheet and design parameters that have already been set.
Conduction loss is driven by the on-time of the FET, the switched current, and the on-resistance:
where
Switching loss is determined by the switching energy of the device and the switching voltage at a selected test point. Determine the value of the switching energy from the device data sheet using the value of the designed external gate resistor. The remainder of the values needed were determined earlier in the design phase.
Figure 2-32 shows an example of the graph used to extract the switching energy values from the device data sheet is shown for an C3M0060065D SiC MOSFET.
The diode conduction loss is similarly calculated using known values:
where
Using these three equations, the expected losses of the design are computed for both the SiC MOSFETs as shown in Table 2-1.
PARAMETER | C3M0075120D (Q1) | C3M0060065D (Q3) |
---|---|---|
Conduction loss | 5.76 W | 4.5 W |
Switching loss | 1.8 W | 1.13 W |
Diode loss | 0 W | 0 W |
Total | 7.56 W | 5.63 W |
The final piece of the total system loss estimation is the inductor losses. These losses are determined using the value of the inductor DC and AC resistance and expected inductor current from Section 2.3.1.3.
The total major energy loss for this design is then:
Use Equation 30 to determine the total expected inverter efficiency. Note that this is an estimation, but the estimate allows the design to be validated up to this point.