TIDUE53I march   2018  – july 2023 TMS320F28P550SJ , TMS320F28P559SJ-Q1

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Highlighted Products
      1. 2.2.1  UCC21710
      2. 2.2.2  UCC5320
      3. 2.2.3  TMS320F28379D
      4. 2.2.4  AMC1305M05
      5. 2.2.5  OPA4340
      6. 2.2.6  LM76003
      7. 2.2.7  PTH08080W
      8. 2.2.8  TLV1117
      9. 2.2.9  OPA350
      10. 2.2.10 UCC14240
    3. 2.3 System Design Theory
      1. 2.3.1 Three-Phase T-Type Inverter
        1. 2.3.1.1 Architecture Overview
        2. 2.3.1.2 LCL Filter Design
        3. 2.3.1.3 Inductor Design
        4. 2.3.1.4 SiC MOSFETs Selection
        5. 2.3.1.5 Loss Estimations
        6. 2.3.1.6 Thermal Considerations
      2. 2.3.2 Voltage Sensing
      3. 2.3.3 Current Sensing
      4. 2.3.4 System Power Supplies
        1. 2.3.4.1 Main Input Power Conditioning
        2. 2.3.4.2 Isolated Bias Supplies
      5. 2.3.5 Gate Drivers
        1. 2.3.5.1 1200-V SiC MOSFETs
        2. 2.3.5.2 650-V SiC MOSFETs
        3. 2.3.5.3 Gate Driver Bias Supply
      6. 2.3.6 Control Design
        1. 2.3.6.1 Current Loop Design
        2. 2.3.6.2 PFC DC Bus Voltage Regulation Loop Design
  9. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Required Hardware and Software
      1. 3.1.1 Hardware
        1. 3.1.1.1 Test Hardware Required
        2. 3.1.1.2 Microcontroller Resources Used on the Design (TMS320F28379D)
        3. 3.1.1.3 F28377D, F28379D Control-Card Settings
        4. 3.1.1.4 Microcontroller Resources Used on the Design (TMS320F280039C)
      2. 3.1.2 Software
        1. 3.1.2.1 Getting Started With Firmware
          1. 3.1.2.1.1 Opening the CCS project
          2. 3.1.2.1.2 Digital Power SDK Software Architecture
          3. 3.1.2.1.3 Interrupts and Lab Structure
          4. 3.1.2.1.4 Building, Loading and Debugging the Firmware
        2. 3.1.2.2 Protection Scheme
        3. 3.1.2.3 PWM Switching Scheme
        4. 3.1.2.4 ADC Loading
    2. 3.2 Testing and Results
      1. 3.2.1 Lab 1
      2. 3.2.2 Testing Inverter Operation
        1. 3.2.2.1 Lab 2
        2. 3.2.2.2 Lab 3
        3. 3.2.2.3 Lab 4
      3. 3.2.3 Testing PFC Operation
        1. 3.2.3.1 Lab 5
        2. 3.2.3.2 Lab 6
        3. 3.2.3.3 Lab 7
      4. 3.2.4 Test Setup for Efficiency
      5. 3.2.5 Test Results
        1. 3.2.5.1 PFC Mode - 230 VRMS, 400 V L-L
          1. 3.2.5.1.1 PFC Start-up – 230 VRMS, 400 L-L AC Voltage
          2. 3.2.5.1.2 Steady State Results at 230 VRMS, 400 V L-L - PFC Mode
          3. 3.2.5.1.3 Efficiency and THD Results at 220 VRMS, 50 Hz – PFC Mode
          4. 3.2.5.1.4 Transient Test With Step Load Change
        2. 3.2.5.2 PFC Mode - 120 VRMS, 208 V L-L
          1. 3.2.5.2.1 Steady State Results at 120 VRMS, 208 V-L-L - PFC Mode
          2. 3.2.5.2.2 Efficiency and THD Results at 120 VRMS - PFC Mode
        3. 3.2.5.3 Inverter Mode
          1. 3.2.5.3.1 Inverter Closed Loop Results
          2. 3.2.5.3.2 Efficiency and THD Results - Inverter Mode
          3. 3.2.5.3.3 Inverter - Transient Test
      6. 3.2.6 Open Loop Inverter Test Results
  10. 4Design Files
    1. 4.1 Schematics
    2. 4.2 Bill of Materials
    3. 4.3 PCB Layout Recommendations
      1. 4.3.1 Layout Prints
    4. 4.4 Altium Project
    5. 4.5 Gerber Files
    6. 4.6 Assembly Drawings
  11. 5Trademarks
  12. 6About the Authors
  13. 7Revision History

2.3.5.2 650-V SiC MOSFETs

Figure 2-44 shows the schematic design of the isolated MOSFET gate driver. The UCC5320S primary side is powered by a 3.3-V rail. A 0.1-µF ceramic capacitor is placed close to the VCC1 pin for noise decoupling. The positive going UVLO threshold on the supply is 2.6 V and the negative going threshold is 2.5 V.

The PWM input to the gate driver is provided by the controller PWM output peripheral. Dead time must be inserted between the low-side and high-side PWM signals to prevent both switches turning on at the same time. The signal is single ended and is filtered by RC low-pass filter comprising of R417 and C410 before connecting to the gate driver input. The filter attenuates high-frequency noise and prevents overshoot and undershoot on the PWM inputs due to longer tracks from the controller to the gate driver. The inverting PWM input IN– is not used in the design and is connected to primary side ground.

The UCC5320S has split outputs that allow for controlling the turn-on rise time and turn-off fall time of the MOSFETs individually. A 3.3-Ω gate resistor R418 is used for MOSFETs turn-on. A 3.3-Ω MOSFET turn-off resistor R420 allows for strong turn-off, helping reduce turn-off losses. The low value of the turn-off resistor also increases the immunity of the gate drive circuit to Miller induced parasitic turn-on effects. A 10-kΩ resistor is connected across the MOSFET gate to collector pins close to the MOSFET on the main power board. This connection makes sure that the MOSFET remains in the off state in case the gate driver gets disconnected from the MOSFET due to faults.

GUID-152D375B-CFEA-413E-877A-97272449D754-low.svgFigure 2-44 UCC5320 Gate Drive Circuit