TIDUEB2A July 2022 – July 2022
Adjustments were made to the HGATE design of U7 to reduce the turn on time of Q5. This reduction is made by increasing the gate current delivered to Q5 from 55 μA to 600 μA. To increase the HGATE current that can be delivered by U7, a circuit including D10, Q21, and R84 was added. This circuit amplifies the source current of the HGATE pin by driving an NPN transistor (Q21) that is connected between the charge pump output (CAP, U7 pin 11) and the gate of Q5. A series resistance (R84) is also added to this path to limit the current injection. Diode (D10) is also added between the gate of Q5 and HGATE (U7 pin 8) to allow the HGATE pin to sink current when turning the FET off. Equation 4 provides an example calculation for the HGATE current injection limit. The charge pump of the LM74800 provides an output of VS + 13.2 V. In this case VS is connected to the output of the batteries and is assumed to be 16.8 V. The charge pump can supply a maximum current of 2.4 mA. The current design has the injection current set to be 600 μA, but this current can be increased by reducing R84.
Example 1.
Example 2.