TIDUEJ8C January   2019  – May 2024

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
    3. 2.3 Highlighted Products
      1. 2.3.1 MSPM0G1506
      2. 2.3.2 LMG2100R044
      3. 2.3.3 INA241
      4. 2.3.4 TPSM365
      5. 2.3.5 TMP303
    4. 2.4 System Design Theory
      1. 2.4.1 MPPT Operation
      2. 2.4.2 Buck Converter
        1. 2.4.2.1 Output Inductance
        2. 2.4.2.2 Input Capacitance
      3. 2.4.3 Current Sense Amplifier
        1. 2.4.3.1 Shunt Resistor Selection
        2. 2.4.3.2 Current Measurement Resolution
        3. 2.4.3.3 Shunt Resistor Power Dissipation
      4. 2.4.4 Switching Regulator
  9. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Required Hardware and Software
      1. 3.1.1 Hardware
        1. 3.1.1.1 TIDA-010042
        2. 3.1.1.2 ITECH-IT6724H
        3. 3.1.1.3 Chroma, 63107A
      2. 3.1.2 Software Flow
    2. 3.2 Testing and Results
      1. 3.2.1 Test Setup
      2. 3.2.2 Test Results
  10. 4Design Files
    1. 4.1 Schematics
    2. 4.2 Bill of Materials
    3. 4.3 PCB Layout Recommendations
      1. 4.3.1 Loop Inductances
      2. 4.3.2 Current Sense Amplifiers
      3. 4.3.3 Trace Widths
      4. 4.3.4 Layout Prints
    4. 4.4 Altium Project
    5. 4.5 Gerber Files
    6. 4.6 Assembly Drawings
    7. 4.7 Software Files
  11. 5Related Documentation
    1. 5.1 Trademarks
    2. 5.2 Support Resources
  12. 6About the Author
  13. 7Revision History

1 System Description

This reference design is developed around TI gallium nitride (GaN) FETs LMG2100 with integrated gate drivers and MSPM0G1506 MCU. The design is targeted for small and medium power solar charger controller designs, capable of operating with 15 to 60V solar panel modules and 12V or 24V batteries with up to 16A output current.

The design uses the perturb-and-observe algorithm for MPPT and has an operating efficiency of greater than 98%. The high efficiency can be reached due to the half-bridge GaN FETs module with low RDS(on), low switching losses, and zero reverse recovery charge in the design. Usage of small sized passive components is made possible by the high switching frequency (up to 250kHz) of the buck converter.