TIDUES0E June   2019  – April 2024 TMS320F28P550SJ , TMS320F28P559SJ-Q1

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Highlighted Products
      1. 2.2.1  UCC21710
      2. 2.2.2  UCC14141-Q1
      3. 2.2.3  AMC1311
      4. 2.2.4  AMC1302
      5. 2.2.5  OPA320
      6. 2.2.6  AMC1306M05
      7. 2.2.7  AMC1336
      8. 2.2.8  TMCS1133
      9. 2.2.9  TMS320F280039C
      10. 2.2.10 TLVM13620
      11. 2.2.11 ISOW1044
      12. 2.2.12 TPS2640
    3. 2.3 System Design Theory
      1. 2.3.1 Dual Active Bridge Analogy With Power Systems
      2. 2.3.2 Dual-Active Bridge – Switching Sequence
      3. 2.3.3 Dual-Active Bridge – Zero Voltage Switching (ZVS)
      4. 2.3.4 Dual-Active Bridge - Design Considerations
        1. 2.3.4.1 Leakage Inductor
        2. 2.3.4.2 Soft Switching Range
        3. 2.3.4.3 Effect of Inductance on Current
        4. 2.3.4.4 Phase Shift
        5. 2.3.4.5 Capacitor Selection
          1. 2.3.4.5.1 DC-Blocking Capacitors
        6. 2.3.4.6 Switching Frequency
        7. 2.3.4.7 Transformer Selection
        8. 2.3.4.8 SiC MOSFET Selection
      5. 2.3.5 Loss Analysis
        1. 2.3.5.1 SiC MOSFET and Diode Losses
        2. 2.3.5.2 Transformer Losses
        3. 2.3.5.3 Inductor Losses
        4. 2.3.5.4 Gate Driver Losses
        5. 2.3.5.5 Efficiency
        6. 2.3.5.6 Thermal Considerations
  9. 3Circuit Description
    1. 3.1 Power Stage
    2. 3.2 DC Voltage Sensing
      1. 3.2.1 Primary DC Voltage Sensing
      2. 3.2.2 Secondary DC Voltage Sensing
        1. 3.2.2.1 Secondary Side Battery Voltage Sensing
    3. 3.3 Current Sensing
    4. 3.4 Power Architecture
      1. 3.4.1 Auxiliary Power Supply
      2. 3.4.2 Gate Driver Bias Power Supply
      3. 3.4.3 Isolated Power Supply for Sense Circuits
    5. 3.5 Gate Driver Circuit
    6. 3.6 Additional Circuitry
    7. 3.7 Simulation
      1. 3.7.1 Setup
      2. 3.7.2 Running Simulations
  10. 4Hardware, Software, Testing Requirements, and Test Results
    1. 4.1 Required Hardware and Software
      1. 4.1.1 Hardware
      2. 4.1.2 Software
        1. 4.1.2.1 Getting Started With Software
        2. 4.1.2.2 Pin Configuration
        3. 4.1.2.3 PWM Configuration
        4. 4.1.2.4 High-Resolution Phase Shift Configuration
        5. 4.1.2.5 ADC Configuration
        6. 4.1.2.6 ISR Structure
    2. 4.2 Test Setup
    3. 4.3 PowerSUITE GUI
    4. 4.4 LABs
      1. 4.4.1 Lab 1
      2. 4.4.2 Lab 2
      3. 4.4.3 Lab 3
      4. 4.4.4 Lab 4
      5. 4.4.5 Lab 5
      6. 4.4.6 Lab 6
      7. 4.4.7 Lab 7
    5. 4.5 Test Results
      1. 4.5.1 Closed-Loop Performance
  11. 5Design Files
    1. 5.1 Schematics
    2. 5.2 Bill of Materials
    3. 5.3 Altium Project
    4. 5.4 Gerber Files
    5. 5.5 Assembly Drawings
  12. 6Related Documentation
    1. 6.1 Trademarks
  13. 7Terminology
  14. 8About the Author
  15. 9Revision History

2.3.4 Dual-Active Bridge - Design Considerations

A number of factors are critical in the design of the power stage of a dual-active bridge. The most important factors are the selection of leakage inductor, desired phase shift of operation, output capacitor rating, switching frequency of operation, selection of SiC MOSFETs, transformer, and intended ZVS range of operation. Many of these design parameters are interrelated, and selection of any one of them has a direct impact on the others. For example, the selection of leakage inductor has a direct effect on the maximum power transferred, which in turn affects the phase shift of operation of the converter at the intended power level. Each of these factors are discussed in detail in the following sections.