TIDUET7G September 2019 – October 2023
Traditional LLC is basically achieved with Si MOSFETs. This reference design considers using GaN as a power tube because GaN is well-cooled, the input pin is voltage-compatible isolated drive, and can distinguish between overtemperature (OT) and overcurrent (OC). GaN also have advantages such as temperature reporting, 1-kW is sufficient with a 50-mR RDS(on) GaN.
To drive the primary-side GaN on the secondary side, use two ISO7721 isolators which can obtain the GaN fault information.