TIDUF18A October 2022 – February 2024
All plug-in hybrid electric vehicles (PHEVs) require an onboard charger (OBC) between the power grid and the high-voltage battery pack located inside the vehicle. Implementing a power factor correction (PFC) converter is mandatory to connect directly to the power grid for AC/DC power conversion and maximize the real power that flows to the downstream DC/DC converters.
Conventional PFC converters implement a passive diode bridge for rectification, which is now known as a passive PFC technique. The advantages of such a scheme are: simple design, reliability, slow-system control loop, and low cost. However, the disadvantages are also very obvious: the passive components are heavy with a low-power factor and generate significant power losses, which results in bulky heat sinks and a lot of heat dissipation. Further investigation into the matter shows that an input bridge consumes approximately 2% of the input power at the low line of a wide mains application. If the designer can suppress one of the series diodes, then they can save 1% of the input power, which allows the efficiency to rise from 94% to 95% (Turchi; Dalal; Wang; Lenck 2014). Due to previously-mentioned drawbacks, the power rating of bridged traditional PFCs is limited under hundreds of watts, especially in a hybrid-electric vehicle (HEV) or electric vehicle (EV) where reduced space and weight are the key design parameters.
As a result, the trend continues to move toward a bridgeless architecture with the elimination of the traditional diode bridge. The OBC is based on a silicon power device and has limitations such as low efficiency, low power density, and high weight. With the advantages of the SiC MOSFET, the designer can greatly improve these limitations by utilizing the superior performance of fast switching, low reverse recovery charge, and a low RDS(ON).
Figure 3-1 shows the basic structure of the totem-pole bridgeless PFC boost rectifier. The component consists of a boost inductor, two high-frequency boost GaN or SiC switches (Labeled SiC1 and SiC2 in the diagram below), and two components for conducting current at the line frequency. The line frequency components can be two slow diodes, as Figure 3-1 shows. Side (A) shows two silicon diodes (D1 and D2). Side (B) shows that the use of Si1 and Si2 further increases the efficiency.
The inherent issue in the totem-pole PFC is the operation mode transition at the AC voltage zero-crossing. When the AC input changes from the positive half line to the negative half line at the zero-crossing, the duty ratio of the low-side high-frequency switch SiC2 changes from 100% to 0%, and the duty cycle of SiC1 changes from 0% to 100%. Because of the slow reverse recovery of the high-side diode (or body diode of the MOSFET), the voltage at the cathode of D2 cannot jump from ground to DC+ voltage instantly (this causes a large current spike). Because of this issue, the designer cannot use an Si MOSFET in a continuous-conduction mode (CCM) totem-pole PFC. Therefore SiC1 and SiC2 must be either gallium nitride (GaN) or SiC MOSFET field-effect transistors (FETs), which have a low reverse recovery, for TIDM-02013 we have chosen GaN FETs.
The biggest advantage of the totem-pole PFC is the reduced power losses in the conduction path. Table 3-1 shows the device comparison between a conventional PFC and a totem-pole PFC.
PARAMETER | LOW-FREQUENCY DIODES | HIGH-FREQUENCY DIODES | HIGH-FREQUENCY SWITCHES | CONDUCTION PATHS |
---|---|---|---|---|
Conventional bridged PFC | Four | One | One | Two low-speed diodes + one switch or (two low-speed diodes + one high-speed diode) |
Totem-pole bridgeless PFC | Two | Zero | Two | One high-speed GaN switch + one low-speed Si (or SiC) MOSFET |
The following list summarizes the benefits of the totem-pole PFC: