TIDUF21A December   2022  – January 2023

 

  1.   Description
  2.   Resources
  3.   Features
  4.   Applications
  5.   5
  6. 1System Description
  7. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1 Description of Control Logic
      2. 2.2.2 Behavior Throughout Charge Cycle
      3. 2.2.3 Additional Design Recommendations
      4. 2.2.4 Simulation Results
    3. 2.3 Highlighted Products
      1. 2.3.1 TPSI3052-Q1
      2. 2.3.2 TLV7011
      3. 2.3.3 UCC27517A-Q1
  8. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Hardware Requirements
    2. 3.2 Test Setup
    3. 3.3 Test Results
  9. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 Schematics
      2. 4.1.2 BOM
    2. 4.2 Documentation Support
    3. 4.3 Support Resources
    4. 4.4 Trademarks
  10. 5About the Authors
  11. 6Revision History

3.3 Test Results

The following PCB shows the area ocupied by the active precharge. In total the active precharge design occupies an area of (80 mm x 55 mm) and a heigth of 26 mm. The schematics shown below represent the tested design and the results are shown next.
GUID-20221206-SS0I-QS65-GLHF-P0NHMKNSKRSS-low.pngFigure 3-1 Circuit Board
GUID-20221206-SS0I-GLNG-SZW2-GLKQSTPKFLBZ-low.gifFigure 3-2 Schematics
The following scope capture shows the active precharge operating with a 400-V input and a 2-mF output capacitance. For this test E3M0075120K SiC MOSFETs were used which are rated for 1.2-kV. The large capacitance was precharged in 200-ms as expected.
GUID-20221206-SS0I-JVSJ-TP0C-S5MS6Q8PWK8Q-low.pngFigure 3-3 TPSI3052-Q1 at 400-V with E3M0075120K (MOSFET 1200 V/75 mOhm, SiC, E3M, TO-247-4)
The following scope capture shows the active precharge operating with a 800-V input and a 2-mF output capacitance. For this test E3M0075120K SiC MOSFETs were used which are rated for 1.2-kV. The large capacitance was precharged in 400-ms as expected.
GUID-20221206-SS0I-TJ5B-N6QP-K6X7JQ1GJVWH-low.pngFigure 3-4 TPSI3052-Q1 at 800-V with E3M0075120K (MOSFET 1200 V/75mOhm, SiC, E3M, TO-247-4)
The following scope capture shows the active precharge operating with a 400-V input and a 2-mF output capacitance. For this test E3M0060065K SiC MOSFETs were used which are rated for 650-V. The large capacitance was precharged in 200-ms as expected.
GUID-20221206-SS0I-68TC-F2GT-DWLS4FRGN87R-low.pngFigure 3-5 TPSI3052-Q1 at 400-V with E3M0060065K (MOSFET 650 V/60 mOhm, SiC, E3M, TO-247-4)