TIDUF22 January 2023
Thermal performance is validated in this design. The conditions are as shown in the following list:
Figure 3-17 shows the test setup for the temperature rising test.
Figure 3-18 shows boost inductor temperature at 200 VAC, 4 kW, temperature rising is 69.6°C – 25°C = 44.6°C.
Since the GaN daughterboard is underneath the main board, measuring the GaN temperature rising with a thermal imager is difficult. However, GaN reports the temperature at the TEMP pin in PWM mode, and the PWM duty ratio represents temperature. Firmware monitors the PWM duty ratio, and calculates temperature, and reports this information to the host PC through the UART port. Figure 3-19 is the heartbeat report on the UART terminal. The temperature of GaN can be read in the report.
For some applications with even lower AC input voltage, the input current is higher, so temperature rising of GaN, diode bridge, and boost inductor is even higher. Users must fully evaluate temperature rising of those devices, to make sure the devices have enough temperature rising margin.