TIDUF23 may   2023

 

  1.   Description
  2.   Resources
  3.   Features
  4.   Applications
  5.   5
  6. 1System Description
    1. 1.1 Key System Specifications
  7. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
    3. 2.3 Highlighted Products
      1. 2.3.1  UCC5880-Q1
      2. 2.3.2  AM2634-Q1
      3. 2.3.3  TMS320F280039C-Q1
      4. 2.3.4  UCC14240-Q1
      5. 2.3.5  UCC12051-Q1
      6. 2.3.6  AMC3330-Q1
      7. 2.3.7  TCAN1462-Q1
      8. 2.3.8  ISO1042-Q1
      9. 2.3.9  ALM2403-Q1
      10. 2.3.10 LM5158-Q1
      11. 2.3.11 LM74202-Q1
    4. 2.4 System Design Theory
      1. 2.4.1 Microcontrollers
        1. 2.4.1.1 Microcontroller – C2000™
        2. 2.4.1.2 Microcontroller – Sitara™
      2. 2.4.2 Isolated Bias Supply
      3. 2.4.3 Power Tree
        1. 2.4.3.1 Introduction
        2. 2.4.3.2 Power Tree Block Diagram
        3. 2.4.3.3 12 V Distribution and Control
        4. 2.4.3.4 Gate Drive Supply
        5. 2.4.3.5 5-Volt Supply Domain
        6. 2.4.3.6 Current and Position Sensing Power
  8. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Hardware Requirements
      1. 3.1.1 Hardware Board Overview
        1. 3.1.1.1 Control Board
        2. 3.1.1.2 MCU Control Card – Sitara™
        3. 3.1.1.3 MCU Control Card – C2000™
        4. 3.1.1.4 Gate Driver and Bias Supply Board
        5. 3.1.1.5 DC Bus Voltage Sense
        6. 3.1.1.6 SiC Power Module
          1. 3.1.1.6.1 XM3 SiC Power Module
          2. 3.1.1.6.2 Module Power Terminals
          3. 3.1.1.6.3 Module Signal Terminals
          4. 3.1.1.6.4 Integrated NTC Temperature Sensor
        7. 3.1.1.7 Laminated Busing and DC Bus Capacitors
          1. 3.1.1.7.1 Discharge PCB
    2. 3.2 Test Setup
      1. 3.2.1 Software Setup
        1. 3.2.1.1 Code Composer Studio Project
        2. 3.2.1.2 Software Structure
    3. 3.3 Test Procedure
      1. 3.3.1 Project Setup
      2. 3.3.2 Running the Application
    4. 3.4 Test Results
      1. 3.4.1 Isolated Bias Supply
      2. 3.4.2 Isolated Gate Driver
      3. 3.4.3 Inverter System
  9. 4General Texas Instruments High Voltage Evaluation (TI HV EVM) User Safety Guidelines
  10. 5Design and Documentation Support
    1. 5.1 Design Files
      1. 5.1.1 Schematics
      2. 5.1.2 BOM
      3. 5.1.3 PCB Layout Recommendations
        1. 5.1.3.1 Layout Prints
      4. 5.1.4 Altium Project
      5. 5.1.5 Gerber Files
      6. 5.1.6 Assembly Drawings
    2. 5.2 Tools and Software
    3. 5.3 Documentation Support
    4. 5.4 Support Resources
    5. 5.5 Trademarks
  11. 6Terminology

3.4.3 Inverter System

The traction inverter system was tested at the rated voltage and power levels with an inductive load. The UCC5880-Q1 gate driver's drive strength was varied to study its impact on the system's efficiency. The scope plots for the SiC MOSFET's drain-source voltages (Vds) and phase currents are shown in the following figures. The test waveforms with weak and strong gate drive stregths are shown in Figure 3-25 and Figure 3-27 respectively. The test conditions and obtained power results are shown in Table 3-7. In an inductive load test, the load power recirculates. Therefore, external DC supply only supplies the system losses, which is quantified as Ploss. It is seen that with a higher drive strength, the system losses also reduce. This is primarily due to the reduction in switching losses. However, as seen in Figure 3-27, higher drive strength also increases the drain-source voltage overshoot on the SiC MOSFETs. The variable drive strength feature of the UCC5880-Q1 gate driver allows the real-time optimization of system losses.

GUID-20230427-SS0I-FS3N-DZ6B-QM6ZDCQG7X89-low.svg Figure 3-25 Voltage and Phase Current Waveforms with Weak Gate Drive Strength (IRMS = 285 A)
GUID-20230427-SS0I-GBJ1-RRBL-CFVS5QHQLHLM-low.svg Figure 3-26 Voltage and Phase Current Waveforms with Weak Gate Drive Strength (IRMS = 320 A)
GUID-20230427-SS0I-J8M1-8RGN-NBFPFCBDKQ3R-low.svg Figure 3-27 Voltage and Phase Current Waveforms with Strong Gate Drive Strength (IRMS = 285 A)
GUID-20230427-SS0I-BVKD-PLRQ-KNKBSN9QXRZ8-low.svg Figure 3-28 Voltage and Phase Current Waveforms with Strong Gate Drive Strength (IRMS = 320 A)
Table 3-7 Test Conditions and Results
Gate-drive Strength DC Bus Voltage RMS Current Ploss
Weak 800 V 285 A 4.2111 kW
Weak 800 V 320 A 5.1627 kW
Strong 800 V 285 A 2.273 kW
Strong 800 V 320 A 2.747 kW