TIDUF43 August 2024
All components were selected to consume less than 40μA in low-power mode. This quiescent current is mostly comprised from the TPS1213-Q1, which consumes a low IQ of 35μA when driving the low-power path FET. Since the INA296B-Q1 does not have an enable pin, the TPS22919-Q1 load switch was used to control the state of the INA296B-Q1 in low-power mode. Table 3-2 shows the quiescent current for all devices in low-power mode.
DEVICE | IQ (LOW-POWER MODE) |
---|---|
TPS1213-Q1 | 35μA |
INA296B-Q1 | N/A |
TPS22919-Q1 | 0.002μA |
TPS7B81-Q1 | 2.7μA |
LM74704-Q1 | 1μA |
MSPM0L1306-Q1(Standby Mode) | 1.4μA |
Figure 3-1 shows the TPS1213-Q1 schematic. Because the LM74704-Q1 is disabled in low-power mode, a drop-in output voltage around 0.7V is expected due to the internal FET diode of Q1 conducting.
When selecting the load wakeup trigger threshold, which is 200mA for this design, use Equation 1:
where
Either R4 or R11 can be used for the RBYPASS depending if a high-side or low-side resistor is desired.
For pre-release TPS1213-Q1 silicon, use Equation 2 instead of Equation 1.