TIDUF63A December   2023  – June 2024

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 PV or Battery Input With DC/DC Converter
    2. 1.2 Isolation and CLLLC Converter
    3. 1.3 DC/AC Converter
    4. 1.4 Key System Specifications
  8. 2System Design Theory
    1. 2.1 Boost Converter Design
    2. 2.2 MPPT Operation
    3. 2.3 CLLLC Converter Design
      1. 2.3.1 Achieving Zero Voltage Switching (ZVS)
      2. 2.3.2 Resonant Tank Design
    4. 2.4 DC/AC Converter Design
  9. 3System Overview
    1. 3.1 Block Diagram
    2. 3.2 Design Considerations
      1. 3.2.1 DC/DC Converter
        1. 3.2.1.1 Input Current and Voltage Senses and MPPT
        2. 3.2.1.2 Inrush Current Limit
      2. 3.2.2 CLLLC Converter
        1. 3.2.2.1 Low-Voltage Side
        2. 3.2.2.2 High-Voltage Side
        3. 3.2.2.3 Modulation scheme
      3. 3.2.3 DC/AC Converter
        1. 3.2.3.1 Active Components Selection
          1. 3.2.3.1.1 High-Frequency FETs: GaN FETs
          2. 3.2.3.1.2 Isolated Power Supply
          3. 3.2.3.1.3 Low-Frequency FETs
        2. 3.2.3.2 Passive Components Selection
          1. 3.2.3.2.1 Boost Inductor Selection
          2. 3.2.3.2.2 Cx Capacitance Selection
          3. 3.2.3.2.3 EMI Filter Design
          4. 3.2.3.2.4 DC-Link Output Capacitance
        3. 3.2.3.3 Voltage and Current Measurements
    3. 3.3 Highlighted Products
      1. 3.3.1  TMDSCNCD280039C - TMS320F280039C Evaluation Module C2000™ MCU controlCARD™
      2. 3.3.2  LMG3522R050 - 650-V 50-mΩ GaN FET With Integrated Driver
      3. 3.3.3  LMG2100R044 - 100-V, 35-A GaN Half-Bridge Power Stage
      4. 3.3.4  TMCS1123 - Precision Hall-Effect Current Sensor
      5. 3.3.5  AMC1302 - Precision, ±50-mV Input, Reinforced Isolated Amplifier
      6. 3.3.6  AMC3330 - Precision, ±1-V Input, Reinforced Isolated Amplifier With Integrated DC/DC Converter
      7. 3.3.7  AMC1311 - High-Impedance, 2-V Input, Reinforced Isolated Amplifier
      8. 3.3.8  ISO6741 - General-Purpose Reinforced Quad-Channel Digital Isolators with Robust EMC
      9. 3.3.9  UCC21540 - Reinforced Isolation Dual-Channel Gate Driver
      10. 3.3.10 LM5164 - 100-V Input, 1-A Synchronous Buck DC/DC Converter with Ultra-low IQ
  10. 4Hardware, Software, Testing Requirements, and Test Results
    1. 4.1 Hardware Requirements
    2. 4.2 Test Setup
      1. 4.2.1 DC/DC Test
      2. 4.2.2 DC/AC Test
    3. 4.3 Test Results
      1. 4.3.1 Input DC/DC Boost Results
      2. 4.3.2 CLLLC Results
      3. 4.3.3 DC/AC Results
  11. 5Design and Documentation Support
    1. 5.1 Design Files
      1. 5.1.1 Schematics
      2. 5.1.2 BOM
    2. 5.2 Tools and Software
    3. 5.3 Documentation Support
    4. 5.4 Support Resources
    5. 5.5 Trademarks
  12. 6About the Author
  13. 7Revision History

3.3.2 LMG3522R050 - 650-V 50-mΩ GaN FET With Integrated Driver

The LMG3522R050 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency. The LMG3522R050 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI's low inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 15 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance. Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.