TIDUF63A December   2023  – June 2024

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 PV or Battery Input With DC/DC Converter
    2. 1.2 Isolation and CLLLC Converter
    3. 1.3 DC/AC Converter
    4. 1.4 Key System Specifications
  8. 2System Design Theory
    1. 2.1 Boost Converter Design
    2. 2.2 MPPT Operation
    3. 2.3 CLLLC Converter Design
      1. 2.3.1 Achieving Zero Voltage Switching (ZVS)
      2. 2.3.2 Resonant Tank Design
    4. 2.4 DC/AC Converter Design
  9. 3System Overview
    1. 3.1 Block Diagram
    2. 3.2 Design Considerations
      1. 3.2.1 DC/DC Converter
        1. 3.2.1.1 Input Current and Voltage Senses and MPPT
        2. 3.2.1.2 Inrush Current Limit
      2. 3.2.2 CLLLC Converter
        1. 3.2.2.1 Low-Voltage Side
        2. 3.2.2.2 High-Voltage Side
        3. 3.2.2.3 Modulation scheme
      3. 3.2.3 DC/AC Converter
        1. 3.2.3.1 Active Components Selection
          1. 3.2.3.1.1 High-Frequency FETs: GaN FETs
          2. 3.2.3.1.2 Isolated Power Supply
          3. 3.2.3.1.3 Low-Frequency FETs
        2. 3.2.3.2 Passive Components Selection
          1. 3.2.3.2.1 Boost Inductor Selection
          2. 3.2.3.2.2 Cx Capacitance Selection
          3. 3.2.3.2.3 EMI Filter Design
          4. 3.2.3.2.4 DC-Link Output Capacitance
        3. 3.2.3.3 Voltage and Current Measurements
    3. 3.3 Highlighted Products
      1. 3.3.1  TMDSCNCD280039C - TMS320F280039C Evaluation Module C2000™ MCU controlCARD™
      2. 3.3.2  LMG3522R050 - 650-V 50-mΩ GaN FET With Integrated Driver
      3. 3.3.3  LMG2100R044 - 100-V, 35-A GaN Half-Bridge Power Stage
      4. 3.3.4  TMCS1123 - Precision Hall-Effect Current Sensor
      5. 3.3.5  AMC1302 - Precision, ±50-mV Input, Reinforced Isolated Amplifier
      6. 3.3.6  AMC3330 - Precision, ±1-V Input, Reinforced Isolated Amplifier With Integrated DC/DC Converter
      7. 3.3.7  AMC1311 - High-Impedance, 2-V Input, Reinforced Isolated Amplifier
      8. 3.3.8  ISO6741 - General-Purpose Reinforced Quad-Channel Digital Isolators with Robust EMC
      9. 3.3.9  UCC21540 - Reinforced Isolation Dual-Channel Gate Driver
      10. 3.3.10 LM5164 - 100-V Input, 1-A Synchronous Buck DC/DC Converter with Ultra-low IQ
  10. 4Hardware, Software, Testing Requirements, and Test Results
    1. 4.1 Hardware Requirements
    2. 4.2 Test Setup
      1. 4.2.1 DC/DC Test
      2. 4.2.2 DC/AC Test
    3. 4.3 Test Results
      1. 4.3.1 Input DC/DC Boost Results
      2. 4.3.2 CLLLC Results
      3. 4.3.3 DC/AC Results
  11. 5Design and Documentation Support
    1. 5.1 Design Files
      1. 5.1.1 Schematics
      2. 5.1.2 BOM
    2. 5.2 Tools and Software
    3. 5.3 Documentation Support
    4. 5.4 Support Resources
    5. 5.5 Trademarks
  12. 6About the Author
  13. 7Revision History

3.3.3 LMG2100R044 - 100-V, 35-A GaN Half-Bridge Power Stage

The LMG2100R044 device is an 80-V continuous, 100-V pulsed, 35-A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 100-V GaN FETs driven by one high-frequency 80-V GaN FET driver in a half-bridge configuration. GaN FETs provide significant advantages for power conversion since GaN FETs have near-zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG2100R044 device is available in a 5.5-mm × 4.5-mm × 0.89-mm lead-free package and can be easily mounted on PCBs. The TTL logic-compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique provides the gate voltages of the enhancement mode GaN FETs are within a safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. This device is an excellent choice for applications requiring high-frequency, high-efficiency operation in a small form factor.